A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires
A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires
A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.
978-1-4799-4110-0
2-5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Chen, Ruiqi
2198083c-19b4-40dd-a28e-5929b80577c5
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
August 2013
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Chen, Ruiqi
2198083c-19b4-40dd-a28e-5929b80577c5
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng, Sun, Kai, Kiang, Kian Shen, Chen, Ruiqi, Wang, Yudong, Gholipour, Behrad, Hewak, Daniel W., Hector, Andrew L., Reid, Gillian and de Groot, C.H.
(2013)
A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires.
13th Non-Volatile Memory Technology Symposium (NVMTS), Minneapolis, United States.
12 - 14 Aug 2013.
.
(doi:10.1109/NVMTS.2013.6851047).
Record type:
Conference or Workshop Item
(Paper)
Abstract
A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.
Other
Huang2013-A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires.PDF
- Accepted Manuscript
More information
Published date: August 2013
Venue - Dates:
13th Non-Volatile Memory Technology Symposium (NVMTS), Minneapolis, United States, 2013-08-12 - 2013-08-14
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Electrochemistry, FIMS
Identifiers
Local EPrints ID: 367237
URI: http://eprints.soton.ac.uk/id/eprint/367237
ISBN: 978-1-4799-4110-0
PURE UUID: deb84380-9466-4d35-87d4-0af0ea29533d
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Date deposited: 24 Jul 2014 15:12
Last modified: 15 Mar 2024 03:42
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Contributors
Author:
Ruomeng Huang
Author:
Kai Sun
Author:
Kian Shen Kiang
Author:
Ruiqi Chen
Author:
Yudong Wang
Author:
Behrad Gholipour
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