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A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires

A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires
A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires
A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.
978-1-4799-4110-0
2-5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Chen, Ruiqi
2198083c-19b4-40dd-a28e-5929b80577c5
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Chen, Ruiqi
2198083c-19b4-40dd-a28e-5929b80577c5
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, Ruomeng, Sun, Kai, Kiang, Kian Shen, Chen, Ruiqi, Wang, Yudong, Gholipour, Behrad, Hewak, Daniel W., Hector, Andrew L., Reid, Gillian and de Groot, C.H. (2013) A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires. 13th Non-Volatile Memory Technology Symposium (NVMTS), Minneapolis, United States. 11 - 13 Aug 2013. pp. 2-5 . (doi:10.1109/NVMTS.2013.6851047).

Record type: Conference or Workshop Item (Paper)

Abstract

A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.

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Huang2013-A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires.PDF - Accepted Manuscript
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More information

Published date: August 2013
Venue - Dates: 13th Non-Volatile Memory Technology Symposium (NVMTS), Minneapolis, United States, 2013-08-11 - 2013-08-13
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Electrochemistry, FIMS

Identifiers

Local EPrints ID: 367237
URI: http://eprints.soton.ac.uk/id/eprint/367237
ISBN: 978-1-4799-4110-0
PURE UUID: deb84380-9466-4d35-87d4-0af0ea29533d
ORCID for Kian Shen Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 24 Jul 2014 15:12
Last modified: 07 Oct 2020 01:49

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Contributors

Author: Ruomeng Huang
Author: Kai Sun
Author: Kian Shen Kiang ORCID iD
Author: Ruiqi Chen
Author: Yudong Wang
Author: Behrad Gholipour
Author: Daniel W. Hewak ORCID iD
Author: Gillian Reid ORCID iD
Author: C.H. de Groot ORCID iD

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