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Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10 µm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.
zinc oxide nanowire, top-down fabrication, field-effect transistor, atomic layer deposition
1931-7573
517-[7pp]
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Ditshego, N.M. Jack
a6e2b1ec-2a55-40f1-90e0-59bc59f1b26d
Gunn, Robert
6492aa2c-1754-405e-ac62-0eedf0ed1757
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mohamed Sultan, Suhana
f789d611-a667-4d61-82b8-3902158b29c2
Ditshego, N.M. Jack
a6e2b1ec-2a55-40f1-90e0-59bc59f1b26d
Gunn, Robert
6492aa2c-1754-405e-ac62-0eedf0ed1757
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Mohamed Sultan, Suhana, Ditshego, N.M. Jack, Gunn, Robert, Ashburn, Peter and Chong, Harold M.H. (2014) Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors. Nanoscale Research Letters, 9, 517-[7pp]. (doi:10.1186/1556-276X-9-517).

Record type: Article

Abstract

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10 µm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing.

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More information

Accepted/In Press date: 12 September 2014
e-pub ahead of print date: 24 September 2014
Published date: 2014
Keywords: zinc oxide nanowire, top-down fabrication, field-effect transistor, atomic layer deposition
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 367668
URI: http://eprints.soton.ac.uk/id/eprint/367668
ISSN: 1931-7573
PURE UUID: a5b0f2e9-f9c3-48e6-a0db-0097cb9d1cd5
ORCID for Harold M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 05 Aug 2014 07:17
Last modified: 15 Mar 2024 03:30

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Contributors

Author: Suhana Mohamed Sultan
Author: N.M. Jack Ditshego
Author: Robert Gunn
Author: Peter Ashburn
Author: Harold M.H. Chong ORCID iD

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