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Growth of single and multilayer sesquioxide crystal films for lasing applications via pulsed laser deposition

Growth of single and multilayer sesquioxide crystal films for lasing applications via pulsed laser deposition
Growth of single and multilayer sesquioxide crystal films for lasing applications via pulsed laser deposition
Sesquioxides, materials of the form RE2O3 (RE: rare earth), are of great interest for lasing applications. These materials offer high thermal conductivities, are mechanically stable, can easily be doped with various rare earth ions and are optically isotropic. Members of the sesquioxide family have the same crystal structure but differing refractive indices, and hence are ideal candidates for multilayer as well as single film growth. Sesquioxides can be challenging to grow from the melt, however, due to their high melting points (>2400 °C).
Sloyan, K.A.
68d5379e-ee95-4539-b016-36e305fedf75
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Heinrich, S.
a49179c4-7fc4-45e5-b3be-26e97d2c3588
Huber, G.
f53411af-3002-48a1-bb5c-c9ca56e9e43e
Sloyan, K.A.
68d5379e-ee95-4539-b016-36e305fedf75
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Heinrich, S.
a49179c4-7fc4-45e5-b3be-26e97d2c3588
Huber, G.
f53411af-3002-48a1-bb5c-c9ca56e9e43e

Sloyan, K.A., Eason, R.W., Heinrich, S. and Huber, G. (2013) Growth of single and multilayer sesquioxide crystal films for lasing applications via pulsed laser deposition. SPIE Photonics West 2013, United States. 02 - 07 Feb 2013. 1 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

Sesquioxides, materials of the form RE2O3 (RE: rare earth), are of great interest for lasing applications. These materials offer high thermal conductivities, are mechanically stable, can easily be doped with various rare earth ions and are optically isotropic. Members of the sesquioxide family have the same crystal structure but differing refractive indices, and hence are ideal candidates for multilayer as well as single film growth. Sesquioxides can be challenging to grow from the melt, however, due to their high melting points (>2400 °C).

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Published date: 2013
Venue - Dates: SPIE Photonics West 2013, United States, 2013-02-02 - 2013-02-07
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 367791
URI: http://eprints.soton.ac.uk/id/eprint/367791
PURE UUID: 6e04e264-e746-4ddb-87da-4bc39e22d7f4
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 11 Sep 2014 13:28
Last modified: 18 Feb 2021 16:36

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