PbSe quantum dots grown in a high-index low-melting-temperature glass for infrared laser applications
PbSe quantum dots grown in a high-index low-melting-temperature glass for infrared laser applications
PbSe quantum dots (QDs) were grown in high-refractive-index low-melting-temperature lead-phosphate glass. QDs with various sizes ranging from 2 nm to 5.3 nm were grown by controlling the growth parameters, heat-treatment temperature and time. The corresponding room-temperature exciton absorption was tuned within the infrared region from 0.93 µm to 2.75 µm. Photoluminescence was measured for samples with absorption peaks above 0.95eV. Real time quantum dot growth was demonstrated by monitoring the evolution of exciton absorption with temperature and time duration. As a demonstration of the use of QDs in laser applications, the saturation fluence (Fsat) of one of the QDs was evaluated and found to be ~2.1 µJ/cm2 at 1.2 µm.
quantum dots, exciton absorption, saturable absorbers, high-index glass, lead-phosphate glass
Pradeesh, Kannan
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Choudhary, Amol
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Mills, B.
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Leonard, V.
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Hewak, D.W.
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Feng, X.
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Shepherd, D.P.
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February 2013
Pradeesh, Kannan
d264c1f5-cbaf-42ac-a939-10fce00fa5cb
Choudhary, Amol
a5540b54-f153-43e4-a59a-e3ed9360904b
Mills, B.
05f1886e-96ef-420f-b856-4115f4ab36d0
Leonard, V.
19532751-4c67-485c-8af4-7c3d0e4fc547
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Feng, X.
9953a7b7-94ca-4a06-96c9-7c09a2c92198
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Pradeesh, Kannan, Choudhary, Amol, Mills, B., Leonard, V., Hewak, D.W., Feng, X. and Shepherd, D.P.
(2013)
PbSe quantum dots grown in a high-index low-melting-temperature glass for infrared laser applications.
Photonics West, San Francisco, United States.
02 - 07 Feb 2013.
8 pp
.
(doi:10.1117/12.2001079).
Record type:
Conference or Workshop Item
(Paper)
Abstract
PbSe quantum dots (QDs) were grown in high-refractive-index low-melting-temperature lead-phosphate glass. QDs with various sizes ranging from 2 nm to 5.3 nm were grown by controlling the growth parameters, heat-treatment temperature and time. The corresponding room-temperature exciton absorption was tuned within the infrared region from 0.93 µm to 2.75 µm. Photoluminescence was measured for samples with absorption peaks above 0.95eV. Real time quantum dot growth was demonstrated by monitoring the evolution of exciton absorption with temperature and time duration. As a demonstration of the use of QDs in laser applications, the saturation fluence (Fsat) of one of the QDs was evaluated and found to be ~2.1 µJ/cm2 at 1.2 µm.
More information
Published date: February 2013
Additional Information:
8621-3
Venue - Dates:
Photonics West, San Francisco, United States, 2013-02-02 - 2013-02-07
Keywords:
quantum dots, exciton absorption, saturable absorbers, high-index glass, lead-phosphate glass
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 367839
URI: http://eprints.soton.ac.uk/id/eprint/367839
PURE UUID: d134c9f1-df0d-484d-926d-0f1c3f392586
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Date deposited: 17 Sep 2014 11:36
Last modified: 15 Mar 2024 03:27
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Contributors
Author:
Kannan Pradeesh
Author:
Amol Choudhary
Author:
V. Leonard
Author:
X. Feng
Author:
D.P. Shepherd
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