Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

Khenkin, M., Emelyanov, A., Kazanskii, A., Forsh, P.A., Kon'kov, O.I., Beresna, M., Gecevičius, M. and Kazansky, P.G. (2014) Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation. SPIE Photonics Europe, Photonics for Solar Energy Systems V, Brussels, Belgium. 14 - 17 Apr 2014. (doi:10.1117/12.2051752).

Abstract

Crystallization of amorphous hydrogenated silicon thin films with femtosecond laser pulses is a currently developable technique for nanocrystalline silicon production for optoelectronics applications. The significant drawback of this technology is the hydrogen losses upon laser treatment of the film, while certain hydrogen concentration is essential to obtain high-quality material. Therefore we aimed to study the effect of post-hydrogenation of laser-modified amorphous silicon films on their hydrogen content and photoelectric properties. Using laser pulses of different fluence we obtained two-phase films with different crystalline volume fraction up to 60%. Post-hydrogenation procedure was found to partially compensate hydrogen out-diffusion and remarkably increase photoconductivity of highly crystallized films. At the same time the contribution of nanocrystalline phase to the total films' photoconductivity substantially increases. The results points out the effectiveness of applied hydrogenation procedure for a production of laser crystallized amorphous silicon films with suitable properties for optoelectronics.

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