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Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation
Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation
Crystallization of amorphous hydrogenated silicon thin films with femtosecond laser pulses is a currently developable technique for nanocrystalline silicon production for optoelectronics applications. The significant drawback of this technology is the hydrogen losses upon laser treatment of the film, while certain hydrogen concentration is essential to obtain high-quality material. Therefore we aimed to study the effect of post-hydrogenation of laser-modified amorphous silicon films on their hydrogen content and photoelectric properties. Using laser pulses of different fluence we obtained two-phase films with different crystalline volume fraction up to 60%. Post-hydrogenation procedure was found to partially compensate hydrogen out-diffusion and remarkably increase photoconductivity of highly crystallized films. At the same time the contribution of nanocrystalline phase to the total films' photoconductivity substantially increases. The results points out the effectiveness of applied hydrogenation procedure for a production of laser crystallized amorphous silicon films with suitable properties for optoelectronics.
Khenkin, M.
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Emelyanov, A.
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Kazanskii, A.
64330637-cd77-4df3-9420-d9b7f3fe635d
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Kon'kov, O.I.
b0a0eebd-711a-4d5c-9c99-787f0ba67075
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Gecevičius, M.
271576ee-dd9d-40b3-ab2f-19686b91dc64
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Khenkin, M.
63d32c64-4da1-4a91-8eeb-f8a0a95e0636
Emelyanov, A.
5c5f1b1e-4181-4ce9-92c5-209677183e8e
Kazanskii, A.
64330637-cd77-4df3-9420-d9b7f3fe635d
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Kon'kov, O.I.
b0a0eebd-711a-4d5c-9c99-787f0ba67075
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Gecevičius, M.
271576ee-dd9d-40b3-ab2f-19686b91dc64
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c

Khenkin, M., Emelyanov, A., Kazanskii, A., Forsh, P.A., Kon'kov, O.I., Beresna, M., Gecevičius, M. and Kazansky, P.G. (2014) Post-hydrogenation of amorphous hydrogenated silicon films modified by femtosecond laser irradiation. SPIE Photonics Europe, Photonics for Solar Energy Systems V, Belgium. 14 - 17 Apr 2014.

Record type: Conference or Workshop Item (Paper)

Abstract

Crystallization of amorphous hydrogenated silicon thin films with femtosecond laser pulses is a currently developable technique for nanocrystalline silicon production for optoelectronics applications. The significant drawback of this technology is the hydrogen losses upon laser treatment of the film, while certain hydrogen concentration is essential to obtain high-quality material. Therefore we aimed to study the effect of post-hydrogenation of laser-modified amorphous silicon films on their hydrogen content and photoelectric properties. Using laser pulses of different fluence we obtained two-phase films with different crystalline volume fraction up to 60%. Post-hydrogenation procedure was found to partially compensate hydrogen out-diffusion and remarkably increase photoconductivity of highly crystallized films. At the same time the contribution of nanocrystalline phase to the total films' photoconductivity substantially increases. The results points out the effectiveness of applied hydrogenation procedure for a production of laser crystallized amorphous silicon films with suitable properties for optoelectronics.

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More information

Published date: April 2014
Additional Information: 914012-914012-7
Venue - Dates: SPIE Photonics Europe, Photonics for Solar Energy Systems V, Belgium, 2014-04-14 - 2014-04-17
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 367845
URI: http://eprints.soton.ac.uk/id/eprint/367845
PURE UUID: 1c95de12-558f-4c98-823f-1a911b55c78b

Catalogue record

Date deposited: 17 Sep 2014 11:44
Last modified: 28 Feb 2019 17:31

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