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Helium ion microscopy and energy selective scanning electron microscopy – two advanced microscopy techniques with complementary applications

Helium ion microscopy and energy selective scanning electron microscopy – two advanced microscopy techniques with complementary applications
Helium ion microscopy and energy selective scanning electron microscopy – two advanced microscopy techniques with complementary applications
Both scanning electron microscopes (SEM) and helium ion microscopes (HeIM) are based on the same principle of a charged particle beam scanning across the surface and generating secondary electrons (SEs) to form images. However, there is a pronounced difference in the energy spectra of the emitted secondary electrons emitted as result of electron or helium ion impact. We have previously presented evidence that this also translates to differences in the information depth through the analysis of dopant contrast in doped silicon structures in both SEM and HeIM. Here, it is now shown how secondary electron emission spectra (SES) and their relation to depth of origin of SE can be experimentally exploited through the use of energy filtering (EF) in low voltage SEM (LV-SEM) to access bulk information from surfaces covered by damage or contamination layers. From the current understanding of the SES in HeIM it is not expected that EF will be as effective in HeIM but an alternative that can be used for some materials to access bulk information is presented.
1742-6588
12049
Rodenburg, C.
45c39718-3633-4cf9-ba0c-3a0b4577c651
Jepson, M.A.E.
dae5d75b-a188-43c7-8d47-c1526a7c7caa
Boden, Stuart A.
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Bagnall, Darren M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Rodenburg, C.
45c39718-3633-4cf9-ba0c-3a0b4577c651
Jepson, M.A.E.
dae5d75b-a188-43c7-8d47-c1526a7c7caa
Boden, Stuart A.
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Bagnall, Darren M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1

Rodenburg, C., Jepson, M.A.E., Boden, Stuart A. and Bagnall, Darren M. (2014) Helium ion microscopy and energy selective scanning electron microscopy – two advanced microscopy techniques with complementary applications. Journal of Physics: Conference Series, 522, 12049. (doi:10.1088/1742-6596/522/1/012049).

Record type: Article

Abstract

Both scanning electron microscopes (SEM) and helium ion microscopes (HeIM) are based on the same principle of a charged particle beam scanning across the surface and generating secondary electrons (SEs) to form images. However, there is a pronounced difference in the energy spectra of the emitted secondary electrons emitted as result of electron or helium ion impact. We have previously presented evidence that this also translates to differences in the information depth through the analysis of dopant contrast in doped silicon structures in both SEM and HeIM. Here, it is now shown how secondary electron emission spectra (SES) and their relation to depth of origin of SE can be experimentally exploited through the use of energy filtering (EF) in low voltage SEM (LV-SEM) to access bulk information from surfaces covered by damage or contamination layers. From the current understanding of the SES in HeIM it is not expected that EF will be as effective in HeIM but an alternative that can be used for some materials to access bulk information is presented.

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e-pub ahead of print date: 11 June 2014
Published date: August 2014
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 367887
URI: https://eprints.soton.ac.uk/id/eprint/367887
ISSN: 1742-6588
PURE UUID: 38855d73-dadc-4a56-83f2-ce8c3982d1b5
ORCID for Stuart A. Boden: ORCID iD orcid.org/0000-0002-4232-1828

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Date deposited: 08 Aug 2014 15:55
Last modified: 28 Jun 2018 00:33

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