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Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Fabrication and ab initio study of downscaled graphene nanoelectronic devices
Fabrication and ab initio study of downscaled graphene nanoelectronic devices
In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.
0819491799
8462
846206
SPIE
Moktadir, Zakaria
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Mizuta, Hiroshi
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Boden, Stuart A.
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Kalhor, Nima
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Hang, Shuojin
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Schmidt, Marek E.
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Cuong, Nguyen Tien
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Chi, Dam Hieu
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Otsuka, Nobuo
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Muruganathan, Manoharan
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Tsuchiya, Yoshishige
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Chong, Harold
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Rutt, Harvey N.
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Bagnall, Darren M.
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Pribat, Didier
Lee, Young-Hee
Razeghi, Manijeh
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Boden, Stuart A.
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Kalhor, Nima
49a4f4e8-3b3e-444a-a8cd-860eb1b621c4
Hang, Shuojin
81fcaaf8-4887-4c09-ae9d-0771be618f0b
Schmidt, Marek E.
e4489af8-f4ff-4e8d-b7d2-8ca34cb51445
Cuong, Nguyen Tien
17ccc387-379e-41c7-9522-d52e09440a61
Chi, Dam Hieu
d603e14a-685b-440b-84bf-9a6e48cd39f7
Otsuka, Nobuo
91f485aa-a0b7-4f80-87ee-c7b154612413
Muruganathan, Manoharan
aea19fd9-4744-4eda-b43b-50d84bf21185
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Rutt, Harvey N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Bagnall, Darren M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Pribat, Didier
Lee, Young-Hee
Razeghi, Manijeh

Moktadir, Zakaria, Mizuta, Hiroshi, Boden, Stuart A., Kalhor, Nima, Hang, Shuojin, Schmidt, Marek E., Cuong, Nguyen Tien, Chi, Dam Hieu, Otsuka, Nobuo, Muruganathan, Manoharan, Tsuchiya, Yoshishige, Chong, Harold, Rutt, Harvey N. and Bagnall, Darren M. (2012) Fabrication and ab initio study of downscaled graphene nanoelectronic devices. In, Pribat, Didier, Lee, Young-Hee and Razeghi, Manijeh (eds.) Carbon Nanotubes, Graphene, and Associated Devices V. (Proceedings of SPIE, , (doi:10.1117/12.956439), 8462) Bellingham, US. SPIE, p. 846206. (doi:10.1117/12.956439).

Record type: Book Section

Abstract

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

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Published date: August 2012
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 367889
URI: https://eprints.soton.ac.uk/id/eprint/367889
ISBN: 0819491799
PURE UUID: f6477c05-9f3b-42be-ad7a-c95c02b55a45
ORCID for Stuart A. Boden: ORCID iD orcid.org/0000-0002-4232-1828
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 08 Aug 2014 16:13
Last modified: 09 Apr 2019 00:35

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Contributors

Author: Zakaria Moktadir
Author: Hiroshi Mizuta
Author: Stuart A. Boden ORCID iD
Author: Nima Kalhor
Author: Shuojin Hang
Author: Marek E. Schmidt
Author: Nguyen Tien Cuong
Author: Dam Hieu Chi
Author: Nobuo Otsuka
Author: Manoharan Muruganathan
Author: Yoshishige Tsuchiya
Author: Harold Chong ORCID iD
Author: Harvey N. Rutt
Author: Darren M. Bagnall
Editor: Didier Pribat
Editor: Young-Hee Lee
Editor: Manijeh Razeghi

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