Germanium for photonic applications
Germanium for photonic applications
Localized GOI wires have been grown using a LPE process resulting in single crystal layers up to 400 µm in length and 5 µm in width. We have reported on the design, fabrication and characterisation of a 4-channel AMMI structure integrated with germanium p-i-n photodetectors to form a silicon photonics receiver. Light detection at 50 Gb/s has been demonstrated with a low dark current of < 20 nA at -1 V bias. The AMMI structure exhibits a low insertion loss of < -0.5 dB and cross-talk of < -15 dB across the 4 channels.
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Soler Penadés, Jordi
f18f3619-0d71-4547-95fd-dd38c37b7adb
Mitchell, C.J.
0e48c936-a405-434d-818a-d83e382aa826
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Soler Penadés, Jordi
f18f3619-0d71-4547-95fd-dd38c37b7adb
Mitchell, C.J.
0e48c936-a405-434d-818a-d83e382aa826
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Gardes, F.Y., Littlejohns, C.G., Soler Penadés, Jordi, Mitchell, C.J., Khokhar, A.Z., Reed, G.T. and Mashanovich, G.Z.
(2014)
Germanium for photonic applications.
ISTDM 2014: 7th International Silicon-Germanium Technology and Device Meeting, Singapore.
02 - 04 Jun 2014.
(doi:10.1109/ISTDM.2014.6874667).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Localized GOI wires have been grown using a LPE process resulting in single crystal layers up to 400 µm in length and 5 µm in width. We have reported on the design, fabrication and characterisation of a 4-channel AMMI structure integrated with germanium p-i-n photodetectors to form a silicon photonics receiver. Light detection at 50 Gb/s has been demonstrated with a low dark current of < 20 nA at -1 V bias. The AMMI structure exhibits a low insertion loss of < -0.5 dB and cross-talk of < -15 dB across the 4 channels.
Text
__userfiles.soton.ac.uk_Users_nl2_mydesktop_Slabakova_Chemistry_articles_ISTDM2014-abstract-Ge work final submission.pdf
- Author's Original
More information
e-pub ahead of print date: June 2014
Venue - Dates:
ISTDM 2014: 7th International Silicon-Germanium Technology and Device Meeting, Singapore, 2014-06-02 - 2014-06-04
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 367988
URI: http://eprints.soton.ac.uk/id/eprint/367988
PURE UUID: 8abdd06a-b2ce-43d1-8e30-dac082ed808c
Catalogue record
Date deposited: 12 Aug 2014 14:47
Last modified: 29 Oct 2024 02:45
Export record
Altmetrics
Contributors
Author:
F.Y. Gardes
Author:
C.G. Littlejohns
Author:
Jordi Soler Penadés
Author:
C.J. Mitchell
Author:
A.Z. Khokhar
Author:
G.T. Reed
Author:
G.Z. Mashanovich
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics