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Group IV functionalization of low index waveguides

Group IV functionalization of low index waveguides
Group IV functionalization of low index waveguides
Low fabrication error sensitivity, integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for future on-chip WDM systems and interfacing with optical fibres. A number of device geometries have already been demonstrated that fulfil these criteria, at least in part, but combining all of the requirements is still a difficult challenge.
Two contenders that could fulfil these criteria are the low loss nitride waveguiding platform and the high index group IV compounds for active photonic devices. Silicon Oxynitride (SiON) and Silicon Nitride (SiN) based waveguides are extremely powerful and central to today’s optical communications networks. The intermediate refractive index provides low footprint devices but eases the fabrication demands that can result in phase errors and repeatability problems in the all silicon approach. This enables multiplexors and demultiplexors with very low crosstalk and insertion loss and extremely low loss long range waveguides, making them very attractive for the optical backplanes and rack to rack links inside supercomputers and data centers. Group IV Photonics GeSi has a number of attractive optical characteristics for modulation, absorption and detection in a small volume area enabling low power and high density integration.
Here, we propose and demonstrate a novel architecture consisting of the interfacing of a range of deposition method using low temperature PECVD and HWCVD nitride waveguides, Photonic crystal modulators [1] but also detectors [2] connected by a silicon nitride bus waveguide. The architecture features very high scalability due to the small size of the devices (~100 micrometre square) and the modulators operate with an AC energy consumption of less than 1fJ/bit.
Gardes, F.Y.
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Domínguez Bucio, Thalía
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Littlejohns, C.G.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Reed, G.T.
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Debnath, K.
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O'Faolain, L.
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Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Littlejohns, C.G.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Debnath, K.
aa01749d-524b-4464-b90a-af072e92a02f
O'Faolain, L.
a3225d11-a3e4-47bc-a601-e2dca9020ad3

Gardes, F.Y., Domínguez Bucio, Thalía, Littlejohns, C.G., Reed, G.T., Debnath, K. and O'Faolain, L. (2014) Group IV functionalization of low index waveguides. Photonics North 2014, Montreal, Canada. 28 - 30 May 2014.

Record type: Conference or Workshop Item (Paper)

Abstract

Low fabrication error sensitivity, integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for future on-chip WDM systems and interfacing with optical fibres. A number of device geometries have already been demonstrated that fulfil these criteria, at least in part, but combining all of the requirements is still a difficult challenge.
Two contenders that could fulfil these criteria are the low loss nitride waveguiding platform and the high index group IV compounds for active photonic devices. Silicon Oxynitride (SiON) and Silicon Nitride (SiN) based waveguides are extremely powerful and central to today’s optical communications networks. The intermediate refractive index provides low footprint devices but eases the fabrication demands that can result in phase errors and repeatability problems in the all silicon approach. This enables multiplexors and demultiplexors with very low crosstalk and insertion loss and extremely low loss long range waveguides, making them very attractive for the optical backplanes and rack to rack links inside supercomputers and data centers. Group IV Photonics GeSi has a number of attractive optical characteristics for modulation, absorption and detection in a small volume area enabling low power and high density integration.
Here, we propose and demonstrate a novel architecture consisting of the interfacing of a range of deposition method using low temperature PECVD and HWCVD nitride waveguides, Photonic crystal modulators [1] but also detectors [2] connected by a silicon nitride bus waveguide. The architecture features very high scalability due to the small size of the devices (~100 micrometre square) and the modulators operate with an AC energy consumption of less than 1fJ/bit.

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More information

e-pub ahead of print date: May 2014
Venue - Dates: Photonics North 2014, Montreal, Canada, 2014-05-28 - 2014-05-30
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 367991
URI: https://eprints.soton.ac.uk/id/eprint/367991
PURE UUID: 00563a9e-1b05-4963-a547-e0cc63d273cb
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

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Date deposited: 12 Aug 2014 14:56
Last modified: 19 Mar 2019 01:21

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Contributors

Author: F.Y. Gardes
Author: C.G. Littlejohns
Author: G.T. Reed
Author: K. Debnath
Author: L. O'Faolain

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