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Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous silicon

Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous silicon
Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous silicon
In this work, we investigate the effect of oxide cap layer on the metal-induced lateral crystallization (MILC) of amorphous silicon. The MILC is characterized at temperatures in the range 550 to 428°C using Nomarski optical microscopy and Raman spectroscopy. It is shown that better lateral crystallization is obtained when the oxide cap layer is omitted, with the crystallization length increasing by 33% for a 15 hour anneal at 550°C. A smaller increase of about 10% is seen at lower temperatures between 525°C and 475°C and no increase is seen below 450°C. It is also shown that the detrimental effect of the oxide cap layer can be dramatically reduced by giving samples a fluorine implant prior to the MILC anneal. Raman spectroscopy shows that random grain growth is significantly less for unimplanted samples without an oxide cap and also for fluorine implanted samples both with and without an oxide cap. The crystallization length improvement for samples without an oxide cap layer is explained by the elimination of random grain crystallization at the interface between the amorphous silicon and the oxide cap layer.
metal-induced lateral crystallization and fluorine effect
2162-8769
P42-P45
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Gunn, R.
c8d5dbda-af74-41cc-8d76-b39444285778
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Hakim, M.M.A.
e584d902-b647-49eb-85bf-15446c06652a
Gunn, R.
c8d5dbda-af74-41cc-8d76-b39444285778
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, K., Hakim, M.M.A., Gunn, R. and Ashburn, P. (2012) Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous silicon. ECS Journal of Solid State Science and Technology, 2 (1), P42-P45. (doi:10.1149/2.038301jss).

Record type: Article

Abstract

In this work, we investigate the effect of oxide cap layer on the metal-induced lateral crystallization (MILC) of amorphous silicon. The MILC is characterized at temperatures in the range 550 to 428°C using Nomarski optical microscopy and Raman spectroscopy. It is shown that better lateral crystallization is obtained when the oxide cap layer is omitted, with the crystallization length increasing by 33% for a 15 hour anneal at 550°C. A smaller increase of about 10% is seen at lower temperatures between 525°C and 475°C and no increase is seen below 450°C. It is also shown that the detrimental effect of the oxide cap layer can be dramatically reduced by giving samples a fluorine implant prior to the MILC anneal. Raman spectroscopy shows that random grain growth is significantly less for unimplanted samples without an oxide cap and also for fluorine implanted samples both with and without an oxide cap. The crystallization length improvement for samples without an oxide cap layer is explained by the elimination of random grain crystallization at the interface between the amorphous silicon and the oxide cap layer.

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Published date: 7 December 2012
Keywords: metal-induced lateral crystallization and fluorine effect
Organisations: Electronics & Computer Science

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Local EPrints ID: 368172
URI: http://eprints.soton.ac.uk/id/eprint/368172
ISSN: 2162-8769
PURE UUID: 9c0b66f8-6f0a-41a6-9ced-79f88cd09895

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Date deposited: 19 Aug 2014 13:02
Last modified: 19 Jul 2019 21:04

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Contributors

Author: K. Sun
Author: M.M.A. Hakim
Author: R. Gunn
Author: P. Ashburn

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