Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

Hughes, Mark A., Fedorenko, Yanina, Gwilliam, Russell M., Homewood, Kevin P., Hinder, Steven, Gholipour, Behrad, Hewak, Daniel W., Lee, Tae-Hoon, Elliott, Stephen R. and Curry, Richard J. (2014) Ion-implantation-enhanced chalcogenide-glass resistive-switching devices. Applied Physics Letters, 105 (8), 83506. (doi:10.1063/1.4894245).

Abstract

We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6×10⁴ and 3×10⁹ for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.

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Contributors

Author: Daniel W. Hewak

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