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Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

Ion-implantation-enhanced chalcogenide-glass resistive-switching devices
Ion-implantation-enhanced chalcogenide-glass resistive-switching devices
We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6×104 and 3×109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.
0003-6951
83506
Hughes, Mark A.
2306bfa8-7474-43ee-bf89-01bb035889bb
Fedorenko, Yanina
66933861-68c8-4307-ace2-d185b0226071
Gwilliam, Russell M.
fbbb9f5f-ac54-42d3-a481-f4a9999c4565
Homewood, Kevin P.
d69a19a9-2eba-4d5a-befd-d4c172ea0676
Hinder, Steven
4b75e806-b49c-4eb8-9a92-2ae8bcc37572
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Lee, Tae-Hoon
b795ff44-9186-4eef-ad92-533c9d412d25
Elliott, Stephen R.
e4a646fb-2898-422a-994d-5c6e166cb4b6
Curry, Richard J.
409b626f-f0b9-4b5e-a12c-6f8b87d20ee0
Hughes, Mark A.
2306bfa8-7474-43ee-bf89-01bb035889bb
Fedorenko, Yanina
66933861-68c8-4307-ace2-d185b0226071
Gwilliam, Russell M.
fbbb9f5f-ac54-42d3-a481-f4a9999c4565
Homewood, Kevin P.
d69a19a9-2eba-4d5a-befd-d4c172ea0676
Hinder, Steven
4b75e806-b49c-4eb8-9a92-2ae8bcc37572
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Lee, Tae-Hoon
b795ff44-9186-4eef-ad92-533c9d412d25
Elliott, Stephen R.
e4a646fb-2898-422a-994d-5c6e166cb4b6
Curry, Richard J.
409b626f-f0b9-4b5e-a12c-6f8b87d20ee0

Hughes, Mark A., Fedorenko, Yanina, Gwilliam, Russell M., Homewood, Kevin P., Hinder, Steven, Gholipour, Behrad, Hewak, Daniel W., Lee, Tae-Hoon, Elliott, Stephen R. and Curry, Richard J. (2014) Ion-implantation-enhanced chalcogenide-glass resistive-switching devices. Applied Physics Letters, 105 (8), 83506. (doi:10.1063/1.4894245).

Record type: Article

Abstract

We report amorphous GaLaSO-based resistive switching devices, with and without Pb-implantation before deposition of an Al active electrode, which switch due to deposition and dissolution of Al metal filaments. The devices set at 2-3 and 3-4 V with resistance ratios of 6×104 and 3×109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under positive Al electrode bias, and Al diffused 40nm further into GaLaSO in the unimplanted device. We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes, to the greater propensity of Al to oxidise.

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More information

Published date: 2014
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 368502
URI: http://eprints.soton.ac.uk/id/eprint/368502
ISSN: 0003-6951
PURE UUID: 932293ca-3606-43e5-894e-e2243b4d29fb
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 04 Sep 2014 12:27
Last modified: 20 Jul 2019 01:21

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Contributors

Author: Mark A. Hughes
Author: Yanina Fedorenko
Author: Russell M. Gwilliam
Author: Kevin P. Homewood
Author: Steven Hinder
Author: Behrad Gholipour
Author: Daniel W. Hewak ORCID iD
Author: Tae-Hoon Lee
Author: Stephen R. Elliott
Author: Richard J. Curry

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