Accurate linear model for SET critical charge estimation
Accurate linear model for SET critical charge estimation
In this paper, we present an accurate linear model for estimating the minimum amount of collected charge due to an energetic particle striking a combinational circuit node that may give rise to a SET with an amplitude larger than the noise margin of the subsequent gates. This charge value will be referred to as SET critical charge (QSET). Our proposed model allows to calculate the QSET of a node as a function of the size of the transistors of the gate driving the node and the fan-out gate(s), with no need for time costly electrical level simulations. This makes our approach suitable to be integrated into a design automation tool for circuit radiation hardening. The proposed model features 96% average accuracy compared to electrical level simulations performed by HSPICE. Additionally, it highlights that Q SET has a much stronger dependence on the strength of the gate driving the node, than on the node total capacitance. This property could be considered by robust design techniques in order to improve their effectiveness.
1161-1166
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Cazeaux, Jose' Manuel
de02151c-4f59-4686-a730-18f78d372562
Omana, Martin
7c091df8-0526-4d15-aa3f-f25dea90dd18
Metra, Cecilia
c420be13-a9cf-471a-96fb-3f43a694ffae
Chatterjee, Abhijit
5785aea1-e251-4ce2-92c7-57c6263a1543
August 2009
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Cazeaux, Jose' Manuel
de02151c-4f59-4686-a730-18f78d372562
Omana, Martin
7c091df8-0526-4d15-aa3f-f25dea90dd18
Metra, Cecilia
c420be13-a9cf-471a-96fb-3f43a694ffae
Chatterjee, Abhijit
5785aea1-e251-4ce2-92c7-57c6263a1543
Rossi, Daniele, Cazeaux, Jose' Manuel, Omana, Martin, Metra, Cecilia and Chatterjee, Abhijit
(2009)
Accurate linear model for SET critical charge estimation.
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 17 (8), .
(doi:10.1109/TVLSI.2009.2020391).
Abstract
In this paper, we present an accurate linear model for estimating the minimum amount of collected charge due to an energetic particle striking a combinational circuit node that may give rise to a SET with an amplitude larger than the noise margin of the subsequent gates. This charge value will be referred to as SET critical charge (QSET). Our proposed model allows to calculate the QSET of a node as a function of the size of the transistors of the gate driving the node and the fan-out gate(s), with no need for time costly electrical level simulations. This makes our approach suitable to be integrated into a design automation tool for circuit radiation hardening. The proposed model features 96% average accuracy compared to electrical level simulations performed by HSPICE. Additionally, it highlights that Q SET has a much stronger dependence on the strength of the gate driving the node, than on the node total capacitance. This property could be considered by robust design techniques in order to improve their effectiveness.
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Published date: August 2009
Organisations:
Electronic & Software Systems
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Local EPrints ID: 368683
URI: http://eprints.soton.ac.uk/id/eprint/368683
ISSN: 1063-8210
PURE UUID: 353ba191-bc8b-4ddd-8c78-b7d4467a578b
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Date deposited: 09 Sep 2014 16:18
Last modified: 14 Mar 2024 17:51
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Author:
Daniele Rossi
Author:
Jose' Manuel Cazeaux
Author:
Martin Omana
Author:
Cecilia Metra
Author:
Abhijit Chatterjee
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