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All-optical, non-volatile, chalcogenide phase-change meta-switch

All-optical, non-volatile, chalcogenide phase-change meta-switch
All-optical, non-volatile, chalcogenide phase-change meta-switch
We show experimentally that bistable, optically-induced phase switching in germanium antimony telluride (GST) - a member of the Te-based chalcogenide alloy family upon which all of today's re-writable optical disc and phase-change RAM technologies are based - provides a platform for the engineering of non-volatile metamaterial transmission/reflection modulators (Fig. 1) for near- to mid-infrared wavelengths with thicknesses down to 1/27 of the operating wavelength. These hybrid materials provide a robust and versatile platform for a new generation of optical switching and memory devices.
IEEE
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Zhang, Jianfa
7ce15288-2016-4b9c-8244-7aed073363ca
Maddock, Jonathan
7a64744f-cd7c-4c6a-b584-af266dd08da5
MacDonald, K.F.
76c84116-aad1-4973-b917-7ca63935dba5
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Zhang, Jianfa
7ce15288-2016-4b9c-8244-7aed073363ca
Maddock, Jonathan
7a64744f-cd7c-4c6a-b584-af266dd08da5
MacDonald, K.F.
76c84116-aad1-4973-b917-7ca63935dba5
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6

Gholipour, Behrad, Zhang, Jianfa, Maddock, Jonathan, MacDonald, K.F., Hewak, D.W. and Zheludev, N.I. (2013) All-optical, non-volatile, chalcogenide phase-change meta-switch. In 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC. IEEE. 1 pp . (doi:10.1109/CLEOE-IQEC.2013.6801264).

Record type: Conference or Workshop Item (Paper)

Abstract

We show experimentally that bistable, optically-induced phase switching in germanium antimony telluride (GST) - a member of the Te-based chalcogenide alloy family upon which all of today's re-writable optical disc and phase-change RAM technologies are based - provides a platform for the engineering of non-volatile metamaterial transmission/reflection modulators (Fig. 1) for near- to mid-infrared wavelengths with thicknesses down to 1/27 of the operating wavelength. These hybrid materials provide a robust and versatile platform for a new generation of optical switching and memory devices.

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Published date: May 2013
Additional Information: CI-4.1
Venue - Dates: 2013 Conference on Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC) and International Quantum Electronics Conference, , Munich, Germany, 2013-05-12 - 2013-05-16
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 368803
URI: http://eprints.soton.ac.uk/id/eprint/368803
PURE UUID: d3a31ac0-48df-4df6-a000-a54a72020d67
ORCID for K.F. MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for N.I. Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

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Date deposited: 17 Sep 2014 13:57
Last modified: 16 Mar 2024 03:10

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Contributors

Author: Behrad Gholipour
Author: Jianfa Zhang
Author: Jonathan Maddock
Author: K.F. MacDonald ORCID iD
Author: D.W. Hewak ORCID iD
Author: N.I. Zheludev ORCID iD

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