The University of Southampton
University of Southampton Institutional Repository

On-transistor level gate sizing for increased robustness to transient faults

On-transistor level gate sizing for increased robustness to transient faults
On-transistor level gate sizing for increased robustness to transient faults
In this paper we present a detailed analysis on how the critical charge (Qcrit) of a circuit node, usually employed to evaluate the probability of transient fault (TF) occurrence as a consequence of a particle hit, depends on transistors' sizing. We derive an analytical model allowing us to calculate a node's Qcrit given the size of the node's driving gate and fan-out gate(s), thus avoiding time costly electrical level simulations. We verified that such a model features an accuracy of the 97% with respect to electrical level simulations performed by HSPICE. Our proposed model shows that Qcrit depends much more on the strength (conductance) of the gate driving the node, than on the node total capacitance. We also evaluated the impact of increasing the conductance of the driving gate on TFs' propagation, hence on soft error susceptibility (SES). We found that such a conductance increase not only improves the TF robustness of the hardened node, but also that of the whole circuit.
0-7695-2406-0
23-28
Cazeaux, Jose Manuel
56eb0eda-d852-43af-9227-054d92e9f755
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Omana, Martin
7c091df8-0526-4d15-aa3f-f25dea90dd18
Chatterjee, Abhijit
5785aea1-e251-4ce2-92c7-57c6263a1543
Metra, Cecilia
c420be13-a9cf-471a-96fb-3f43a694ffae
Cazeaux, Jose Manuel
56eb0eda-d852-43af-9227-054d92e9f755
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Omana, Martin
7c091df8-0526-4d15-aa3f-f25dea90dd18
Chatterjee, Abhijit
5785aea1-e251-4ce2-92c7-57c6263a1543
Metra, Cecilia
c420be13-a9cf-471a-96fb-3f43a694ffae

Cazeaux, Jose Manuel, Rossi, Daniele, Omana, Martin, Chatterjee, Abhijit and Metra, Cecilia (2005) On-transistor level gate sizing for increased robustness to transient faults. 11th IEEE International On-Line Testing Symposium (IOLTS 2005), France. 06 - 08 Jul 2005. pp. 23-28 . (doi:10.1109/IOLTS.2005.49).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper we present a detailed analysis on how the critical charge (Qcrit) of a circuit node, usually employed to evaluate the probability of transient fault (TF) occurrence as a consequence of a particle hit, depends on transistors' sizing. We derive an analytical model allowing us to calculate a node's Qcrit given the size of the node's driving gate and fan-out gate(s), thus avoiding time costly electrical level simulations. We verified that such a model features an accuracy of the 97% with respect to electrical level simulations performed by HSPICE. Our proposed model shows that Qcrit depends much more on the strength (conductance) of the gate driving the node, than on the node total capacitance. We also evaluated the impact of increasing the conductance of the driving gate on TFs' propagation, hence on soft error susceptibility (SES). We found that such a conductance increase not only improves the TF robustness of the hardened node, but also that of the whole circuit.

Text
iolts05-tf.pdf - Version of Record
Restricted to Repository staff only
Request a copy

More information

Published date: July 2005
Venue - Dates: 11th IEEE International On-Line Testing Symposium (IOLTS 2005), France, 2005-07-06 - 2005-07-08
Organisations: Electronic & Software Systems

Identifiers

Local EPrints ID: 368887
URI: http://eprints.soton.ac.uk/id/eprint/368887
ISBN: 0-7695-2406-0
PURE UUID: 0abac225-9c41-47c3-bfa6-6a13dbcfbaf7

Catalogue record

Date deposited: 08 Oct 2014 12:11
Last modified: 18 Nov 2019 20:30

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×