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Group IV light sources to enable the convergence of photonics and electronics

Group IV light sources to enable the convergence of photonics and electronics
Group IV light sources to enable the convergence of photonics and electronics
Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries for mass production. Here, we review the current state-of-the-art developments of silicon and germanium light sources toward monolithic integration. Quantum confinement of electrons and holes in nanostructures has been the primary route for light emission from silicon, and we can use advanced silicon technologies using top-down patterning processes to fabricate these nanostructures, including fin-type vertical multiple-quantum-wells. Moreover, the electromagnetic environment can also be manipulated in a photonic crystal nanocavity to enhance the efficiency of light extraction and emission by the Purcell effect. Germanium is also widely investigated as an active material in Group IV photonics, and novel epitaxial growth technologies are being developed to make a high quality germanium layer on a silicon substrate.To develop a practical germanium laser, various technologies are employed for tensile-stress engineering and high electron doping to compensate the indirect valleys in the conduction band. These challenges are aiming to contribute toward the convergence of electronics and photonics on a silicon chip.
1-15
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Al-Attili, Abderlrahman Z.
37ee3caf-698f-4311-8020-cb9f4485def3
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Al-Attili, Abderlrahman Z.
37ee3caf-698f-4311-8020-cb9f4485def3

Saito, Shinichi, Gardes, Frederic Y. and Al-Attili, Abderlrahman Z. (2014) Group IV light sources to enable the convergence of photonics and electronics. Frontiers in Materials, 1 (15), 1-15. (doi:10.3389/fmats.2014.00015).

Record type: Article

Abstract

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries for mass production. Here, we review the current state-of-the-art developments of silicon and germanium light sources toward monolithic integration. Quantum confinement of electrons and holes in nanostructures has been the primary route for light emission from silicon, and we can use advanced silicon technologies using top-down patterning processes to fabricate these nanostructures, including fin-type vertical multiple-quantum-wells. Moreover, the electromagnetic environment can also be manipulated in a photonic crystal nanocavity to enhance the efficiency of light extraction and emission by the Purcell effect. Germanium is also widely investigated as an active material in Group IV photonics, and novel epitaxial growth technologies are being developed to make a high quality germanium layer on a silicon substrate.To develop a practical germanium laser, various technologies are employed for tensile-stress engineering and high electron doping to compensate the indirect valleys in the conduction band. These challenges are aiming to contribute toward the convergence of electronics and photonics on a silicon chip.

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Accepted/In Press date: 29 August 2014
Published date: 17 September 2014
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 369143
URI: https://eprints.soton.ac.uk/id/eprint/369143
PURE UUID: 4d516d96-71e7-4a93-99f4-07deb49011e5
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 25 Sep 2014 12:12
Last modified: 26 Nov 2019 01:37

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