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Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters

Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters
Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters
We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm-2. SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact.
1094-4087
3234-3243
McBryde, D.
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Barnes, M.E.
02cc9817-23c5-4ddb-855b-1ca14818e67d
Berry, S.A.
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Gow, P.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Beere, H.E.
4068dbab-16c4-444e-8c9c-d56f71da5c50
Ritchie, D.A.
83562b7e-0986-4822-9cfe-8c4ac95596c7
Apostolopoulos, V.
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McBryde, D.
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Barnes, M.E.
02cc9817-23c5-4ddb-855b-1ca14818e67d
Berry, S.A.
0f768f48-36c4-4599-8917-7aae657378a7
Gow, P.
193394b1-fe2d-41de-a9aa-6de7e5925b18
Beere, H.E.
4068dbab-16c4-444e-8c9c-d56f71da5c50
Ritchie, D.A.
83562b7e-0986-4822-9cfe-8c4ac95596c7
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d

McBryde, D., Barnes, M.E., Berry, S.A., Gow, P., Beere, H.E., Ritchie, D.A. and Apostolopoulos, V. (2014) Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters. Optics Express, 22 (3), 3234-3243. (doi:10.1364/OE.22.003234).

Record type: Article

Abstract

We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm-2. SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact.

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e-pub ahead of print date: 4 February 2014
Published date: 10 February 2014
Organisations: Physics & Astronomy

Identifiers

Local EPrints ID: 369147
URI: https://eprints.soton.ac.uk/id/eprint/369147
ISSN: 1094-4087
PURE UUID: 959e8fe6-9bf6-49f5-9160-3c784b3ef89c
ORCID for S.A. Berry: ORCID iD orcid.org/0000-0002-9538-8655
ORCID for P. Gow: ORCID iD orcid.org/0000-0002-3247-9082
ORCID for V. Apostolopoulos: ORCID iD orcid.org/0000-0003-3733-2191

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Date deposited: 18 Sep 2014 15:32
Last modified: 29 Aug 2019 00:41

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