Scalable high-mobility MoS₂ thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

Huang, Chung-Che, Al-Saab, Feras, Wang, Yudong, Ou, Jun-Yu, Walker, John C., Wang, Shuncai, Gholipour, Behrad, Simpson, Robert E. and Hewak, Daniel W. (2014) Scalable high-mobility MoS₂ thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature. Nanoscale, 6 (21), 12792-12797. (doi:10.1039/C4NR04228J).

Abstract

Nano-scale MoS₂ thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS₂ thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS₂ thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS₂ thin films show great promise for nanoelectronic and optoelectronic applications.

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Contributors

Author: Chung-Che Huang

Author: Jun-Yu Ou

Author: Daniel W. Hewak

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