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Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature
Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature
Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.
2040-3364
12792-12797
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Al-Saab, Feras
13f8eca8-04a1-4528-92d7-c5dd053e496c
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Walker, John C.
b300eafd-5b0a-4cf5-86d2-735813b04c6f
Wang, Shuncai
8a390e2d-6552-4c7c-a88f-25bf9d6986a6
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Simpson, Robert E.
ea6c0d6d-2e92-4efd-92ed-c676d15b00f2
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Al-Saab, Feras
13f8eca8-04a1-4528-92d7-c5dd053e496c
Wang, Yudong
c48bcc7c-4cb4-468c-af4e-d1e601222009
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Walker, John C.
b300eafd-5b0a-4cf5-86d2-735813b04c6f
Wang, Shuncai
8a390e2d-6552-4c7c-a88f-25bf9d6986a6
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Simpson, Robert E.
ea6c0d6d-2e92-4efd-92ed-c676d15b00f2
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, Chung-Che, Al-Saab, Feras, Wang, Yudong, Ou, Jun-Yu, Walker, John C., Wang, Shuncai, Gholipour, Behrad, Simpson, Robert E. and Hewak, Daniel W. (2014) Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature. Nanoscale, 6 (21), 12792-12797. (doi:10.1039/C4NR04228J).

Record type: Article

Abstract

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

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More information

Accepted/In Press date: 2 September 2014
e-pub ahead of print date: 4 September 2014
Published date: 2014
Organisations: Optoelectronics Research Centre, Energy Technology Group, Engineering Science Unit, nCATS Group

Identifiers

Local EPrints ID: 369367
URI: http://eprints.soton.ac.uk/id/eprint/369367
ISSN: 2040-3364
PURE UUID: b3aee8bd-3e8d-428b-9f85-1b97190862cb
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Jun-Yu Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 01 Oct 2014 12:21
Last modified: 23 Mar 2021 02:42

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Contributors

Author: Chung-Che Huang ORCID iD
Author: Feras Al-Saab
Author: Yudong Wang
Author: Jun-Yu Ou ORCID iD
Author: John C. Walker
Author: Shuncai Wang
Author: Behrad Gholipour
Author: Robert E. Simpson
Author: Daniel W. Hewak ORCID iD

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