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Preparation of chalcogenide materials for next generation optoelectronic devices

Preparation of chalcogenide materials for next generation optoelectronic devices
Preparation of chalcogenide materials for next generation optoelectronic devices
Chalcogenide materials are finding increasing interest as an active material in next generation optical and electronic devices. There wide range of properties, ranging from photosensitivity, ability to host rare earth ions, electrical conductivity, phase change, exceptional optical non-linearities to name only a few are fueling this interest. Moreover, the ability to synthesize these materials in numerous forms as diverse as 2D monolayers, microspheres, optical fibres, nanowires, thin films as well as bulk glass ingots of over a kilogram in size ensures their application space is vast. We began preparation of chalcogenides, largely based on sulphides, in 1992 and since then have built up an extensive capability for their purification, synthesis and fabrication in various forms. A key aspect of this facility is the ability to process in a flowing atmosphere of hydrogen sulphide which provided the capability of synthesis from elemental, oxide or halide precursors, processing through various chemical vapour deposition reactions as well as post purification.
In this talk we describe recent additions to the range of materials we synthesize highlighting transition metal di-chalcogenides for electronic applications, an example of which is shown below, crystalline semiconductors for solar cell applications, ion implanted thin films which provide carrier type reversal, low power phase change memory devices, switchable metamaterial devices as well as traditional chalcogenides glass and optical fibre.
Hewak, D.W.
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Huang, C.C.
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Yao, J.
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Khan, K.
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Bastock, P.
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Al-Saab, F.
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Gholipour, B.
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Maddock, J.
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Weatherby, E.
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Craig, C.
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MacDonald, K.F.
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Zheludev, N.I.
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Fedorenko, Y.G.
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Hughes, M.A.
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Gwilliam, R.M.
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Homewood, K.P.
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Curry, R.J.
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Hewak, D.W.
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Huang, C.C.
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Yao, J.
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Khan, K.
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Bastock, P.
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Al-Saab, F.
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Gholipour, B.
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Maddock, J.
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Weatherby, E.
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Craig, C.
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MacDonald, K.F.
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Zheludev, N.I.
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Fedorenko, Y.G.
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Hughes, M.A.
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Gwilliam, R.M.
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Homewood, K.P.
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Curry, R.J.
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Hewak, D.W., Huang, C.C., Yao, J., Khan, K., Bastock, P., Al-Saab, F., Gholipour, B., Maddock, J., Weatherby, E., Craig, C., MacDonald, K.F., Zheludev, N.I., Fedorenko, Y.G., Hughes, M.A., Gwilliam, R.M., Homewood, K.P. and Curry, R.J. (2014) Preparation of chalcogenide materials for next generation optoelectronic devices. Advanced Architectures in Photonics '14, Czech Republic. 21 - 22 Sep 2014.

Record type: Conference or Workshop Item (Other)

Abstract

Chalcogenide materials are finding increasing interest as an active material in next generation optical and electronic devices. There wide range of properties, ranging from photosensitivity, ability to host rare earth ions, electrical conductivity, phase change, exceptional optical non-linearities to name only a few are fueling this interest. Moreover, the ability to synthesize these materials in numerous forms as diverse as 2D monolayers, microspheres, optical fibres, nanowires, thin films as well as bulk glass ingots of over a kilogram in size ensures their application space is vast. We began preparation of chalcogenides, largely based on sulphides, in 1992 and since then have built up an extensive capability for their purification, synthesis and fabrication in various forms. A key aspect of this facility is the ability to process in a flowing atmosphere of hydrogen sulphide which provided the capability of synthesis from elemental, oxide or halide precursors, processing through various chemical vapour deposition reactions as well as post purification.
In this talk we describe recent additions to the range of materials we synthesize highlighting transition metal di-chalcogenides for electronic applications, an example of which is shown below, crystalline semiconductors for solar cell applications, ion implanted thin films which provide carrier type reversal, low power phase change memory devices, switchable metamaterial devices as well as traditional chalcogenides glass and optical fibre.

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Published date: September 2014
Venue - Dates: Advanced Architectures in Photonics '14, Czech Republic, 2014-09-21 - 2014-09-22
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 370151
URI: https://eprints.soton.ac.uk/id/eprint/370151
PURE UUID: 5dec4676-8d88-41c3-a369-39aeaddcc197
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for C. Craig: ORCID iD orcid.org/0000-0001-6919-4294
ORCID for K.F. MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for N.I. Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 24 Oct 2014 08:57
Last modified: 15 Oct 2019 00:54

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Contributors

Author: D.W. Hewak ORCID iD
Author: C.C. Huang ORCID iD
Author: J. Yao
Author: K. Khan
Author: P. Bastock
Author: F. Al-Saab
Author: B. Gholipour
Author: J. Maddock
Author: E. Weatherby
Author: C. Craig ORCID iD
Author: K.F. MacDonald ORCID iD
Author: N.I. Zheludev ORCID iD
Author: Y.G. Fedorenko
Author: M.A. Hughes
Author: R.M. Gwilliam
Author: K.P. Homewood
Author: R.J. Curry

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