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Determination of specific contact resistance of Ge2Sb2Te5 phase change materials by spacer etched nanowires

Determination of specific contact resistance of Ge2Sb2Te5 phase change materials by spacer etched nanowires
Determination of specific contact resistance of Ge2Sb2Te5 phase change materials by spacer etched nanowires
Phase change materials (PCM) based memory device is considered as one of the most promising candidates for next-generation non-volatile solid-state memory [1]. The set and reset states in this device correspond to a low resistance and a high resistance of the cell, which in-turn correspond to the crystalline and amorphous states of the phase change material, respectively. The total resistance of a phase change memory cell, however, consists of the resistance from the PCM and the interfacial contact resistance of the PCM to the electrodes. Although a large amount research has been done on characterization of PCM resistance, little attention is paid to study the contact resistance. Here in this work, the contact resistance of Ge2Sb2Te5 to titanium nitride (TiN) electrode has been characterized in both set and reset states using a nanowire structure obtained from spacer etch. This spacer etch is a novel technique and can be used as a low-cost alternative to E-beam lithography for sub-hundred nanometre nanowire fabrication. Unlike bottom-up technology, it is compatible with current CMOS process and the geometry and location of the nanowires can be precisely controlled. In this case it allows us make long structures with small contact area to separate the resistive contribution of bulk and interface
Huang, R.
6f358ca8-2c2c-4867-914d-f25d9021e6ef
Chen, R.
08f4fdc2-6244-48e5-a642-cb9e2641531c
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Kiang, K.S.
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, R.
6f358ca8-2c2c-4867-914d-f25d9021e6ef
Chen, R.
08f4fdc2-6244-48e5-a642-cb9e2641531c
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Kiang, K.S.
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, R., Chen, R., Gholipour, B., Kiang, K.S., Sun, K., Wang, Y. and de Groot, C.H. (2013) Determination of specific contact resistance of Ge2Sb2Te5 phase change materials by spacer etched nanowires. 13th Non-Volatile Memory Technology Symposium, United States. 12 - 14 Aug 2013.

Record type: Conference or Workshop Item (Paper)

Abstract

Phase change materials (PCM) based memory device is considered as one of the most promising candidates for next-generation non-volatile solid-state memory [1]. The set and reset states in this device correspond to a low resistance and a high resistance of the cell, which in-turn correspond to the crystalline and amorphous states of the phase change material, respectively. The total resistance of a phase change memory cell, however, consists of the resistance from the PCM and the interfacial contact resistance of the PCM to the electrodes. Although a large amount research has been done on characterization of PCM resistance, little attention is paid to study the contact resistance. Here in this work, the contact resistance of Ge2Sb2Te5 to titanium nitride (TiN) electrode has been characterized in both set and reset states using a nanowire structure obtained from spacer etch. This spacer etch is a novel technique and can be used as a low-cost alternative to E-beam lithography for sub-hundred nanometre nanowire fabrication. Unlike bottom-up technology, it is compatible with current CMOS process and the geometry and location of the nanowires can be precisely controlled. In this case it allows us make long structures with small contact area to separate the resistive contribution of bulk and interface

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More information

Published date: August 2013
Venue - Dates: 13th Non-Volatile Memory Technology Symposium, United States, 2013-08-12 - 2013-08-14
Organisations: Optoelectronics Research Centre, Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 370156
URI: http://eprints.soton.ac.uk/id/eprint/370156
PURE UUID: da0177a3-d502-4a6d-b799-b46e97b54f52
ORCID for K.S. Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 24 Oct 2014 10:21
Last modified: 11 Jul 2020 00:28

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