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Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RMs
0003-6951
93507
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Zhong, Le, Jiang, Liudi, Huang, Ruomeng and de Groot, C.H. (2014) Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices. Applied Physics Letters, 104 (9), 93507. (doi:10.1063/1.4867198).

Record type: Article

Abstract

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RMs

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Accepted/In Press date: 13 February 2014
e-pub ahead of print date: 4 March 2014
Published date: March 2014
Organisations: Electronics & Computer Science, Nanoelectronics and Nanotechnology, Engineering Science Unit

Identifiers

Local EPrints ID: 371735
URI: https://eprints.soton.ac.uk/id/eprint/371735
ISSN: 0003-6951
PURE UUID: b5828285-9b06-482d-a370-d881a137498d
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 14 Nov 2014 11:18
Last modified: 10 Dec 2019 01:48

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