Lifetime reliability analysis of complementary resistive switches under threshold and doping interface speed variations
Lifetime reliability analysis of complementary resistive switches under threshold and doping interface speed variations
Complementary resistive switching (CRS) memristor is an emerging non-volatile memory device that features low sneak path current compared to traditional memristors. Despite its advantages, threshold voltage and doping interface drift speed variations over time are major concerns for CRS memory devices. In this paper, we will demonstrate that these variations can significantly reduce the CRS lifetime reliability in terms of number of memory operations that can be performed. Based on such demonstrations, comprehensive theoretical and empirical studies are carried out using H-Spice based simulations to investigate into the impact of biasing and threshold voltages on CRS lifetime reliability. Underpinning these studies, a novel CRS lifetime relationship is proposed and extensively validated through further simulations
Gang, L.
4537ba33-7f65-467a-9ce3-c593185f4b70
Mathew, Jimson
156eec1e-d690-43eb-a72f-daefd8b04144
Shafik, Rishad Ahmed
aa0bdafc-b022-4cb2-a8ef-4bf8a03ba524
Pradhan, Dhiraj K.
14f13d30-42ec-43bf-941b-3116a7f803fc
Ottavi, M.
6836afa7-2fba-4ebb-8d31-60ff7b684603
Pontarelli, S.
7cd3ac26-29b9-42ef-ba7c-5906a00b0ec6
14 January 2015
Gang, L.
4537ba33-7f65-467a-9ce3-c593185f4b70
Mathew, Jimson
156eec1e-d690-43eb-a72f-daefd8b04144
Shafik, Rishad Ahmed
aa0bdafc-b022-4cb2-a8ef-4bf8a03ba524
Pradhan, Dhiraj K.
14f13d30-42ec-43bf-941b-3116a7f803fc
Ottavi, M.
6836afa7-2fba-4ebb-8d31-60ff7b684603
Pontarelli, S.
7cd3ac26-29b9-42ef-ba7c-5906a00b0ec6
Gang, L., Mathew, Jimson, Shafik, Rishad Ahmed, Pradhan, Dhiraj K., Ottavi, M. and Pontarelli, S.
(2015)
Lifetime reliability analysis of complementary resistive switches under threshold and doping interface speed variations.
IEEE Transactions on Nanotechnology, 14 (1).
Abstract
Complementary resistive switching (CRS) memristor is an emerging non-volatile memory device that features low sneak path current compared to traditional memristors. Despite its advantages, threshold voltage and doping interface drift speed variations over time are major concerns for CRS memory devices. In this paper, we will demonstrate that these variations can significantly reduce the CRS lifetime reliability in terms of number of memory operations that can be performed. Based on such demonstrations, comprehensive theoretical and empirical studies are carried out using H-Spice based simulations to investigate into the impact of biasing and threshold voltages on CRS lifetime reliability. Underpinning these studies, a novel CRS lifetime relationship is proposed and extensively validated through further simulations
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Published date: 14 January 2015
Organisations:
Electronic & Software Systems
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Local EPrints ID: 371901
URI: http://eprints.soton.ac.uk/id/eprint/371901
PURE UUID: 43fccf04-a98c-45ca-9a97-712149d88f9a
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Date deposited: 21 Nov 2014 11:35
Last modified: 26 Apr 2022 20:37
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Contributors
Author:
L. Gang
Author:
Jimson Mathew
Author:
Rishad Ahmed Shafik
Author:
Dhiraj K. Pradhan
Author:
M. Ottavi
Author:
S. Pontarelli
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