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n-type chalcogenides by ion implantation

n-type chalcogenides by ion implantation
n-type chalcogenides by ion implantation
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
5346
Hughes, Mark A.
2306bfa8-7474-43ee-bf89-01bb035889bb
Fedorenko, Yanina
66933861-68c8-4307-ace2-d185b0226071
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Yao, Jin
d0e505b8-46a9-4c2a-a278-35ff4f85f7da
Lee, Tae-Hoon
b795ff44-9186-4eef-ad92-533c9d412d25
Gwilliam, Russell M.
fbbb9f5f-ac54-42d3-a481-f4a9999c4565
Homewood, Kevin P.
d69a19a9-2eba-4d5a-befd-d4c172ea0676
Hinder, Steven
4b75e806-b49c-4eb8-9a92-2ae8bcc37572
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Elliott, Stephen R.
e4a646fb-2898-422a-994d-5c6e166cb4b6
Curry, Richard J.
409b626f-f0b9-4b5e-a12c-6f8b87d20ee0
Hughes, Mark A.
2306bfa8-7474-43ee-bf89-01bb035889bb
Fedorenko, Yanina
66933861-68c8-4307-ace2-d185b0226071
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Yao, Jin
d0e505b8-46a9-4c2a-a278-35ff4f85f7da
Lee, Tae-Hoon
b795ff44-9186-4eef-ad92-533c9d412d25
Gwilliam, Russell M.
fbbb9f5f-ac54-42d3-a481-f4a9999c4565
Homewood, Kevin P.
d69a19a9-2eba-4d5a-befd-d4c172ea0676
Hinder, Steven
4b75e806-b49c-4eb8-9a92-2ae8bcc37572
Hewak, Daniel W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Elliott, Stephen R.
e4a646fb-2898-422a-994d-5c6e166cb4b6
Curry, Richard J.
409b626f-f0b9-4b5e-a12c-6f8b87d20ee0

Hughes, Mark A., Fedorenko, Yanina, Gholipour, Behrad, Yao, Jin, Lee, Tae-Hoon, Gwilliam, Russell M., Homewood, Kevin P., Hinder, Steven, Hewak, Daniel W., Elliott, Stephen R. and Curry, Richard J. (2014) n-type chalcogenides by ion implantation. Nature Communications, 5, 5346. (doi:10.1038/ncomms6346).

Record type: Article

Abstract

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

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More information

Published date: 7 November 2014
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 372179
URI: http://eprints.soton.ac.uk/id/eprint/372179
PURE UUID: 18b28455-8a5c-4999-9a84-067122f7704c
ORCID for Daniel W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 02 Dec 2014 12:03
Last modified: 03 Dec 2019 02:03

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