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Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity

Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity
Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity
A series of alkylchalcogenostibines, Me2SbSenBu, MeSb(SenBu)2, Sb(SenBu)3 and MeSb(TenBu)2, have been designed and synthesised as potential precursors for chemical vapour deposition (CVD) by reaction of nBuELi (E = Se, Te) with the appropriate halostibine, Me3?nSbCln (n = 1, 2, 3), and characterised by 1H, 13C{1H} and 77Se{1H} or 125Te{1H} NMR spectroscopy as appropriate. MeSb(SenBu)2 and MeSb(TenBu)2 are very effective single source precursors for the low pressure CVD of high quality crystalline thin films of Sb2Se3 and Sb2Te3, respectively, confirmed by scanning electron microscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy and thin film X-ray diffraction. Hall conductivity, carrier mobility, carrier density and, in the case of Sb2Te3, Seebeck coefficient measurements reveal electronic characteristics comparable with Sb2E3 deposited by atomic layer deposition or molecular beam epitaxy, suggesting materials quality and performance suitable for incorporation into electronic device structures. Choice of substrate and deposition conditions were found to significantly affect the morphology and preferred orientation of Sb2Te3 crystallites, enabling deposition of films with either ?1 1 0? or ?0 0 1? alignment. Use of micro-patterned substrates allowed selective deposition of crystalline 2D micro-arrays of Sb2Te3 onto exposed TiN surfaces only.
2050-7526
423-430
Benjamin, Sophie L.
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
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Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Benjamin, Sophie L.
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037

Benjamin, Sophie L., de Groot, C.H., Hector, Andrew L., Huang, Ruomeng, Koukharenko, Elena, Levason, William and Reid, Gillian (2015) Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivity. Journal of Materials Chemistry C, 3, 423-430. (doi:10.1039/C4TC02327G).

Record type: Article

Abstract

A series of alkylchalcogenostibines, Me2SbSenBu, MeSb(SenBu)2, Sb(SenBu)3 and MeSb(TenBu)2, have been designed and synthesised as potential precursors for chemical vapour deposition (CVD) by reaction of nBuELi (E = Se, Te) with the appropriate halostibine, Me3?nSbCln (n = 1, 2, 3), and characterised by 1H, 13C{1H} and 77Se{1H} or 125Te{1H} NMR spectroscopy as appropriate. MeSb(SenBu)2 and MeSb(TenBu)2 are very effective single source precursors for the low pressure CVD of high quality crystalline thin films of Sb2Se3 and Sb2Te3, respectively, confirmed by scanning electron microscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy and thin film X-ray diffraction. Hall conductivity, carrier mobility, carrier density and, in the case of Sb2Te3, Seebeck coefficient measurements reveal electronic characteristics comparable with Sb2E3 deposited by atomic layer deposition or molecular beam epitaxy, suggesting materials quality and performance suitable for incorporation into electronic device structures. Choice of substrate and deposition conditions were found to significantly affect the morphology and preferred orientation of Sb2Te3 crystallites, enabling deposition of films with either ?1 1 0? or ?0 0 1? alignment. Use of micro-patterned substrates allowed selective deposition of crystalline 2D micro-arrays of Sb2Te3 onto exposed TiN surfaces only.

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e-pub ahead of print date: 11 November 2014
Published date: 21 January 2015
Organisations: Characterisation and Analytics, Nanoelectronics and Nanotechnology

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Local EPrints ID: 372722
URI: http://eprints.soton.ac.uk/id/eprint/372722
ISSN: 2050-7526
PURE UUID: 5a31eec4-dc6e-4572-962a-0e7d5464720f
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 18 Dec 2014 16:31
Last modified: 29 Aug 2019 00:55

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Contributors

Author: Sophie L. Benjamin
Author: C.H. de Groot ORCID iD
Author: Ruomeng Huang
Author: Elena Koukharenko
Author: William Levason ORCID iD
Author: Gillian Reid ORCID iD

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