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Effect of stoichiometry of TiN electrode on the switching behavior of TiN/HfOx/TiN structures for resistive RAM

Effect of stoichiometry of TiN electrode on the switching behavior of TiN/HfOx/TiN structures for resistive RAM
Effect of stoichiometry of TiN electrode on the switching behavior of TiN/HfOx/TiN structures for resistive RAM
Two types of TiN/HfOx/TiN devices have been fabricated where the top 200nm TiN electrode has been deposited by two different sputtering methods; reactive, using a titanium target in a nitrogen environment, and non-reactive, using a titanium nitride target. Characterization of the materials shows that the reactive TiN is single-phase stoichiometric TiN with a sheet resistance of 7Ω/square. The non-reactive TiN has a sheet resistance of 300Ω/square and was found to contain significant amounts of oxygen. The resistive switching behavior differs for both devices. The reactive stoichiometric TiN device results in bipolar switching with a Roff/Ron ratio of 50. The non-reactive TiN results in unipolar switching with a Roff/Ron ratio of more than 103, however this device shows poor reproducibility. These results show that an oxygen rich layer between the top electrode and insulator affects the Roff value. It supports the theory of oxygen vacancies leading to the formation of conductive filaments.
Morgan, K.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Huang, R.
c6187811-ef2f-4437-8333-595c0d6ac978
Pearce, S.
1d0ee7c5-8f72-4783-a034-9b2f67de3531
Zhong, L.
1beee635-592f-42fb-8901-c65422f5d52b
Jiang, L.
374f2414-51f0-418f-a316-e7db0d6dc4d1
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Morgan, K.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Huang, R.
c6187811-ef2f-4437-8333-595c0d6ac978
Pearce, S.
1d0ee7c5-8f72-4783-a034-9b2f67de3531
Zhong, L.
1beee635-592f-42fb-8901-c65422f5d52b
Jiang, L.
374f2414-51f0-418f-a316-e7db0d6dc4d1
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Morgan, K., Huang, R., Pearce, S., Zhong, L., Jiang, L. and de Groot, C.H. (2014) Effect of stoichiometry of TiN electrode on the switching behavior of TiN/HfOx/TiN structures for resistive RAM. 2013 MRS Fall Meeting & Exhibit, Boston, United States. 01 - 06 Dec 2013. (doi:10.1557/opl.2014.218).

Record type: Conference or Workshop Item (Paper)

Abstract

Two types of TiN/HfOx/TiN devices have been fabricated where the top 200nm TiN electrode has been deposited by two different sputtering methods; reactive, using a titanium target in a nitrogen environment, and non-reactive, using a titanium nitride target. Characterization of the materials shows that the reactive TiN is single-phase stoichiometric TiN with a sheet resistance of 7Ω/square. The non-reactive TiN has a sheet resistance of 300Ω/square and was found to contain significant amounts of oxygen. The resistive switching behavior differs for both devices. The reactive stoichiometric TiN device results in bipolar switching with a Roff/Ron ratio of 50. The non-reactive TiN results in unipolar switching with a Roff/Ron ratio of more than 103, however this device shows poor reproducibility. These results show that an oxygen rich layer between the top electrode and insulator affects the Roff value. It supports the theory of oxygen vacancies leading to the formation of conductive filaments.

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More information

Published date: 2014
Venue - Dates: 2013 MRS Fall Meeting & Exhibit, Boston, United States, 2013-12-01 - 2013-12-06
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Engineering Science Unit

Identifiers

Local EPrints ID: 374128
URI: http://eprints.soton.ac.uk/id/eprint/374128
PURE UUID: f2673f0e-71ad-4650-917d-f1a7111f973e
ORCID for K. Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for L. Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 06 Feb 2015 16:36
Last modified: 02 May 2020 00:32

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Contributors

Author: K. Morgan ORCID iD
Author: R. Huang
Author: S. Pearce
Author: L. Zhong
Author: L. Jiang ORCID iD
Author: C.H. de Groot ORCID iD

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