Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers


Sazio, P.J.A., Sparks, J.R., He, R., Krishnamurthi, M., Fitzgibbons, T.C., Chaudhuri, S., Baril, N.F., Peacock, A.C., Healy, N., Gopalan, V. and Badding, J.V. (2015) Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers At SPIE Photonics West, United States. 07 - 12 Feb 2015. 8 pp.

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Description/Abstract

ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2-5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode core-cladding waveguiding

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: SPIE Photonics West, United States, 2015-02-07 - 2015-02-12
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Organisations: Optoelectronics Research Centre
ePrint ID: 375129
Date :
Date Event
2015Published
Date Deposited: 13 Mar 2015 11:23
Last Modified: 17 Apr 2017 06:31
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/375129

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