Sazio, P.J.A., Sparks, J.R., He, R., Krishnamurthi, M., Fitzgibbons, T.C., Chaudhuri, S., Baril, N.F., Peacock, A.C., Healy, N., Gopalan, V. and Badding, J.V.
Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers
At SPIE Photonics West, United States.
07 - 12 Feb 2015.
ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2-5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode core-cladding waveguiding
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