Next generation device grade silicon-germanium on insulator

Abstract

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.

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Identifiers

ORCID for Miloš Nedeljković: orcid.org/0000-0002-9170-7911

ORCID for Goran Z. Mashanovich: orcid.org/0000-0003-2954-5138

ORCID for Frederic Y. Gardes: orcid.org/0000-0003-1400-3272

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