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Next generation device grade silicon-germanium on insulator

Next generation device grade silicon-germanium on insulator
Next generation device grade silicon-germanium on insulator
High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.
8288
Littlejohns, Callum
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Nedeljković, Milos
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Mallinson, Christopher F.
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Watts, John F.
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Mashanovich, Goran Z.
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Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic Y.
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Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Mallinson, Christopher F.
f2372d62-5bbd-445b-b40e-4a62db5d9f2f
Watts, John F.
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Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, Frederic Y.
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Littlejohns, Callum, Nedeljković, Milos, Mallinson, Christopher F., Watts, John F., Mashanovich, Goran Z., Reed, Graham T. and Gardes, Frederic Y. (2015) Next generation device grade silicon-germanium on insulator. Scientific Reports, 5, 8288. (doi:10.1038/srep08288).

Record type: Article

Abstract

High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.

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More information

Accepted/In Press date: 12 January 2015
Published date: 6 February 2015
Organisations: Optoelectronics Research Centre, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 375138
URI: https://eprints.soton.ac.uk/id/eprint/375138
PURE UUID: c54a814a-19fc-433e-9535-99579db63101
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

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Date deposited: 13 Mar 2015 15:09
Last modified: 10 Dec 2019 01:34

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Contributors

Author: Callum Littlejohns
Author: Milos Nedeljković ORCID iD
Author: Christopher F. Mallinson
Author: John F. Watts
Author: Graham T. Reed

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