Gain-switched operation of ultrafast laser inscribed waveguides in Cr:ZnSe
Gain-switched operation of ultrafast laser inscribed waveguides in Cr:ZnSe
We report the first demonstration of a gain-switched chromium-doped zinc selenide channel waveguide laser. The guided-wave structure was produced by ultrafast laser inscription and exhibited output pulse energies up to 12 µJ . The laser exhibited narrow spectral output with a linewidth less than 1 nm. The beam quality was measured to be M2 = 7 with a highly multimode output profile. The laser had a maximum slope efficiency of 9.8% and no deleterious thermal effects were observed up to an average pump power of 3.3 W.
McDaniel, S.A.
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Berry, P.A.
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Schepler, K.L.
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MacDonald, J.R.
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Beecher, S.J.
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Kar, A.K.
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2015
McDaniel, S.A.
9af27498-114c-4854-9852-cbaeb9beb482
Berry, P.A.
3b349bcc-ce2f-481e-81f5-8561605b5554
Schepler, K.L.
bd0fcc6c-ba67-46ca-bc3b-913daa49b00b
MacDonald, J.R.
cf266fa8-edb7-40c4-9c86-092c57030821
Beecher, S.J.
b3664adc-d6b5-4a5a-a09a-8e1415c6d3f5
Kar, A.K.
769cb922-50ef-431a-9f74-34d4b54baa00
McDaniel, S.A., Berry, P.A., Schepler, K.L., MacDonald, J.R., Beecher, S.J. and Kar, A.K.
(2015)
Gain-switched operation of ultrafast laser inscribed waveguides in Cr:ZnSe.
SPIE Photonics West: Solid State Lasers XXIV: Technology and Devices, San Francisco, United States.
07 - 12 Feb 2015.
(doi:10.1117/12.2079396).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report the first demonstration of a gain-switched chromium-doped zinc selenide channel waveguide laser. The guided-wave structure was produced by ultrafast laser inscription and exhibited output pulse energies up to 12 µJ . The laser exhibited narrow spectral output with a linewidth less than 1 nm. The beam quality was measured to be M2 = 7 with a highly multimode output profile. The laser had a maximum slope efficiency of 9.8% and no deleterious thermal effects were observed up to an average pump power of 3.3 W.
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Published date: 2015
Venue - Dates:
SPIE Photonics West: Solid State Lasers XXIV: Technology and Devices, San Francisco, United States, 2015-02-07 - 2015-02-12
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 375412
URI: http://eprints.soton.ac.uk/id/eprint/375412
PURE UUID: bcc41732-02d9-461d-be9b-97450545c3ae
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Date deposited: 24 Mar 2015 14:26
Last modified: 14 Mar 2024 19:25
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Contributors
Author:
S.A. McDaniel
Author:
P.A. Berry
Author:
K.L. Schepler
Author:
J.R. MacDonald
Author:
S.J. Beecher
Author:
A.K. Kar
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