Tunable Q-factor silicon microring resonators for ultra-low power parametric processes
Tunable Q-factor silicon microring resonators for ultra-low power parametric processes
A compact silicon ring resonator is demonstrated that allows simple electrical tuning of the ring coupling coefficient and Q-factor and therefore the resonant enhancement of on-chip nonlinear optical processes. Fabrication-induced variation in designed coupling fraction, crucial in the resonator performance, can be overcome using this post-fabrication trimming technique. Tuning of the microring resonator across the critical coupling point is demonstrated, exhibiting a Q-factor tunable between 9000 and 96,000. Consequently, resonantly enhanced four-wave mixing shows tunable efficiency between -40 and -16.3 dB at an ultra-low on-chip pump power of 0.7 mW
1274-1277
Strain, M.J.
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Lacava, Cosimo
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Meriggi, L.
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Cristiani, I.
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Sorel, M.
935c5870-5661-45b9-bd22-d5ffb6c8bc01
12 March 2015
Strain, M.J.
fa0162c2-9424-4788-9569-6fa491c385d2
Lacava, Cosimo
a0a31a27-23ac-4a73-8bb4-2f02368fb8bd
Meriggi, L.
c68c8018-c964-41d4-9f7f-144c9300cdca
Cristiani, I.
7248157e-5a23-4081-b55b-df6e03709bc8
Sorel, M.
935c5870-5661-45b9-bd22-d5ffb6c8bc01
Strain, M.J., Lacava, Cosimo, Meriggi, L., Cristiani, I. and Sorel, M.
(2015)
Tunable Q-factor silicon microring resonators for ultra-low power parametric processes.
Optics Letters, 40 (7), .
(doi:10.1364/OL.40.001274).
Abstract
A compact silicon ring resonator is demonstrated that allows simple electrical tuning of the ring coupling coefficient and Q-factor and therefore the resonant enhancement of on-chip nonlinear optical processes. Fabrication-induced variation in designed coupling fraction, crucial in the resonator performance, can be overcome using this post-fabrication trimming technique. Tuning of the microring resonator across the critical coupling point is demonstrated, exhibiting a Q-factor tunable between 9000 and 96,000. Consequently, resonantly enhanced four-wave mixing shows tunable efficiency between -40 and -16.3 dB at an ultra-low on-chip pump power of 0.7 mW
Text
T Rings Nov 14.pdf
- Accepted Manuscript
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Accepted/In Press date: 18 February 2015
Published date: 12 March 2015
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 375491
URI: http://eprints.soton.ac.uk/id/eprint/375491
ISSN: 0146-9592
PURE UUID: 6dc9fb96-334a-42a0-95e6-eb9a5e01dfd4
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Date deposited: 27 Mar 2015 12:08
Last modified: 14 Mar 2024 19:26
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Contributors
Author:
M.J. Strain
Author:
Cosimo Lacava
Author:
L. Meriggi
Author:
I. Cristiani
Author:
M. Sorel
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