Title:"Design and fabrication of indium phosphide air-bridge 
waveguides with MEMS functionality" 
Authors: Wing H. Ng, Nina Podoliak, Peter Horak, Jiang Wu, Huiyun Liu, William J. Stewart, and Anthony J. Kenyon 
submitted to SPIE Microtechnologies, 4-6 May 2015, Barcelona, Spain

Data description:

Fig1a and Fig1b: Electric field of TE mode at 1550
nm wavelength calculated for two coupled InP waveguides of
dimensions 200 nm × 300 nm and separated by (a) 50 nm and (b) 500
nm. 

Fig2a, Fig2b, and Fig2c: Electric field amplitude of TE-like
propagating mode (top view) for three geometries of pillar
connections: (a) T-connection, (b) MMI-connection, and (c)
S-connection. 

Fig4: Separation between waveguides and corresponding
group index of the TE mode at 1550 nm depending on applied voltage.
An initial waveguide separation of 50 nm is assumed. 

Fig6: SEM image of the reactive ion etched waveguide and pillar structure.

Fig7: SEM image of a section of the released dual InP air-bridge
waveguides suspended in air.
