Title:"Design and fabrication of indium phosphide air-bridge 
waveguides with MEMS functionality" 
Authors: Wing H. Ng, Nina Podoliak, Peter Horak, Jiang Wu, Huiyun Liu, William J. Stewart, and Anthony J. Kenyon 
submitted to SPIE Microtechnologies, 4-6 May 2015, Barcelona, Spain

Data description:

Fig1a and Fig1b: Electric field of TE mode at 1550
nm wavelength calculated for two coupled InP waveguides of
dimensions 200 nm  300 nm and separated by (a) 50 nm and (b) 500
nm. 

Fig2a, Fig2b, and Fig2c: Electric field amplitude of TE-like
propagating mode (top view) for three geometries of pillar
connections: (a) T-connection, (b) MMI-connection, and (c)
S-connection. 

Fig4: Separation between waveguides and corresponding
group index of the TE mode at 1550 nm depending on applied voltage.
An initial waveguide separation of 50 nm is assumed. 

Fig6: SEM image of the reactive ion etched waveguide and pillar structure.

Fig7: SEM image of a section of the released dual InP air-bridge
waveguides suspended in air.
