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Nanoscale MoS2 thin films fabricated by atmospheric pressure chemical vapour deposition at ambient temperature

Nanoscale MoS2 thin films fabricated by atmospheric pressure chemical vapour deposition at ambient temperature
Nanoscale MoS2 thin films fabricated by atmospheric pressure chemical vapour deposition at ambient temperature
We report on the fabrication of scalable MoS2 thin films by atmospheric pressure chemical vapour deposition (APCVD) through the reaction of a MoCl5 precursor and the reactive gas H2S at ambient temperature. As the deposition is taking place at room temperature, these MoS2 thin films can be easily processed with conventional lithography and pre-patterned substrates to create a desired structure. We have deposited and characterized such films on SiO2/Si, silica, and sapphire substrates. As-deposited Mo-S thin films contain MoS2, MoS3, and some unreacted Cl atoms, however pure crystalline MoS2 thin films can be obtained through further reaction with H2 and H2S mixture gases in a two-step annealing process. The as-deposited films are robust and this further annealing can take place after photoresist removal. We have characterized fully annealed MoS2 thin films with SEM, EDX, micro-Raman, UV-VIS-NIR spectrometry, and Hall Effect measurement techniques. The annealed MoS2 thin films show the two characteristic MoS2 Raman peaks, E12g at ~382 cm-1 and A1g at ~405 cm-1, and a band gap of ~1.81eV, has been measured by UV-VIS-NIR spectrometry. The electrical characteristics of these APCVD grown MoS2 films, show they are n-type semiconductor with sheet resistance of 193.5 ± 0.6 Ohms/square, mobility of 33.8 ± 2.4 cm2.V-1.s-1, and carrier density of 1.23 ± 0.09e+21 cm-3. We believe this process and resulting MoS2 films show great promise for nanoelectronic and optoelectronic applications.
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Al-Saab, F.
13f8eca8-04a1-4528-92d7-c5dd053e496c
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Al-Saab, F.
13f8eca8-04a1-4528-92d7-c5dd053e496c
Wang, Y.
23c775f0-3cac-44d5-9e16-2098959c493b
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, Kevin Chung-Che, Al-Saab, F., Wang, Y., Ou, Jun-Yu, Gholipour, B. and Hewak, D.W. (2013) Nanoscale MoS2 thin films fabricated by atmospheric pressure chemical vapour deposition at ambient temperature. International Conference on Materials for Advanced Technologies (ICMAT 2013), Singapore. 30 Jun - 05 Jul 2013.

Record type: Conference or Workshop Item (Paper)

Abstract

We report on the fabrication of scalable MoS2 thin films by atmospheric pressure chemical vapour deposition (APCVD) through the reaction of a MoCl5 precursor and the reactive gas H2S at ambient temperature. As the deposition is taking place at room temperature, these MoS2 thin films can be easily processed with conventional lithography and pre-patterned substrates to create a desired structure. We have deposited and characterized such films on SiO2/Si, silica, and sapphire substrates. As-deposited Mo-S thin films contain MoS2, MoS3, and some unreacted Cl atoms, however pure crystalline MoS2 thin films can be obtained through further reaction with H2 and H2S mixture gases in a two-step annealing process. The as-deposited films are robust and this further annealing can take place after photoresist removal. We have characterized fully annealed MoS2 thin films with SEM, EDX, micro-Raman, UV-VIS-NIR spectrometry, and Hall Effect measurement techniques. The annealed MoS2 thin films show the two characteristic MoS2 Raman peaks, E12g at ~382 cm-1 and A1g at ~405 cm-1, and a band gap of ~1.81eV, has been measured by UV-VIS-NIR spectrometry. The electrical characteristics of these APCVD grown MoS2 films, show they are n-type semiconductor with sheet resistance of 193.5 ± 0.6 Ohms/square, mobility of 33.8 ± 2.4 cm2.V-1.s-1, and carrier density of 1.23 ± 0.09e+21 cm-3. We believe this process and resulting MoS2 films show great promise for nanoelectronic and optoelectronic applications.

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More information

e-pub ahead of print date: 2013
Published date: 2013
Venue - Dates: International Conference on Materials for Advanced Technologies (ICMAT 2013), Singapore, 2013-06-30 - 2013-07-05
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 375957
URI: http://eprints.soton.ac.uk/id/eprint/375957
PURE UUID: db6a1a76-3d20-4a37-935b-4f444b7c4647
ORCID for Kevin Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Jun-Yu Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 22 Apr 2015 13:37
Last modified: 18 Feb 2021 17:17

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