Fabrication and characterisation of suspended narrow silicon nanowire channel for low-power nano-electro-mechanical (NEM) switch applications
Fabrication and characterisation of suspended narrow silicon nanowire channel for low-power nano-electro-mechanical (NEM) switch applications
Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current–voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of −1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.
66-70
Boodhoo, L.
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Cruddington, L.
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Chong, Harold M.H.
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Tsuchiya, Yoshishige
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Moktadir, Zakaria
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Hasegawa, T.
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Mizuta, Hiroshi
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1 September 2015
Boodhoo, L.
3cb5f3c0-0c1f-4d33-93c4-5c75518e1129
Cruddington, L.
c4ad012c-5fcd-4bd8-8025-64aadf5cfd5e
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Hasegawa, T.
3c8a194b-8477-428c-9f41-8124daca9bf6
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Boodhoo, L., Cruddington, L., Chong, Harold M.H., Tsuchiya, Yoshishige, Moktadir, Zakaria, Hasegawa, T. and Mizuta, Hiroshi
(2015)
Fabrication and characterisation of suspended narrow silicon nanowire channel for low-power nano-electro-mechanical (NEM) switch applications.
Microelectronic Engineering, 145, .
(doi:10.1016/j.mee.2015.02.047).
Abstract
Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current–voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of −1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.
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e-pub ahead of print date: 2 March 2015
Published date: 1 September 2015
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 376011
URI: http://eprints.soton.ac.uk/id/eprint/376011
ISSN: 0167-9317
PURE UUID: 347a5aae-d6f7-4c47-8074-1b45b0a7de73
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Date deposited: 13 Apr 2015 07:12
Last modified: 15 Mar 2024 03:30
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Contributors
Author:
L. Boodhoo
Author:
L. Cruddington
Author:
Harold M.H. Chong
Author:
Yoshishige Tsuchiya
Author:
Zakaria Moktadir
Author:
T. Hasegawa
Author:
Hiroshi Mizuta
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