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Ultra low power consuming thermally stable sulphide materials for resistive and phase change memristive application

Ultra low power consuming thermally stable sulphide materials for resistive and phase change memristive application
Ultra low power consuming thermally stable sulphide materials for resistive and phase change memristive application
The use of conventional chalcogenide alloys in rewritable optical disks and the latest generation of electronic memories (phase change and nano-ionic memories) has provided clear commercial and technological advances for the field of data storage, by virtue of the many well-known attributes, in particular scaling, cycling endurance and speed, that these chalcogenide materials offer. While the switching power and current consumption of established germanium antimony telluride based phase change memory cells are a major factor in chip design in real world applications, the thermal stability and high on-state power consumption of these device can be a major obstacle in the path to full commercialization. In this work we describe our research in material discovery and prototype device fabrication and characterization, which through high throughput screening has demonstrated thermally stable, low current consuming chalcogenides for applications in PCRAM and oxygen doped chalcogenides for RRAM which significantly outperform the current contenders.
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Anastasopoulos, A.
848d7bae-d49f-442d-8052-997d4b0a1ca2
Al-Saab, F.
13f8eca8-04a1-4528-92d7-c5dd053e496c
Hayden, B.E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Anastasopoulos, A.
848d7bae-d49f-442d-8052-997d4b0a1ca2
Al-Saab, F.
13f8eca8-04a1-4528-92d7-c5dd053e496c
Hayden, B.E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Gholipour, B., Huang, C.C., Anastasopoulos, A., Al-Saab, F., Hayden, B.E. and Hewak, D.W. (2012) Ultra low power consuming thermally stable sulphide materials for resistive and phase change memristive application. Frontiers in Electronic Materials, Germany. 17 - 21 Jun 2012. 2 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

The use of conventional chalcogenide alloys in rewritable optical disks and the latest generation of electronic memories (phase change and nano-ionic memories) has provided clear commercial and technological advances for the field of data storage, by virtue of the many well-known attributes, in particular scaling, cycling endurance and speed, that these chalcogenide materials offer. While the switching power and current consumption of established germanium antimony telluride based phase change memory cells are a major factor in chip design in real world applications, the thermal stability and high on-state power consumption of these device can be a major obstacle in the path to full commercialization. In this work we describe our research in material discovery and prototype device fabrication and characterization, which through high throughput screening has demonstrated thermally stable, low current consuming chalcogenides for applications in PCRAM and oxygen doped chalcogenides for RRAM which significantly outperform the current contenders.

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e-pub ahead of print date: June 2012
Venue - Dates: Frontiers in Electronic Materials, Germany, 2012-06-17 - 2012-06-21
Organisations: Chemistry, Optoelectronics Research Centre, Electrochemistry

Identifiers

Local EPrints ID: 376172
URI: http://eprints.soton.ac.uk/id/eprint/376172
PURE UUID: 2bbf9012-4912-4fdc-9174-20bcd12ef971
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for B.E. Hayden: ORCID iD orcid.org/0000-0002-7762-1812
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 22 Apr 2015 14:19
Last modified: 18 Feb 2021 17:05

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