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X-ray photoelectron spectroscopy studies of thin GexSb40-xS6o films

Jiang, Liudi, Fitzgerald, A.G., Rose, M.J., Christova, K., Manov, A. and Pamukchieva, V. (2002) X-ray photoelectron spectroscopy studies of thin GexSb40-xS6o films Journal of Non-Crystalline Solids, 297, (1), pp. 13-17. (doi:10.1016/S0022-3093(01)00925-5).

Record type: Article


Thin GexSb40-xS60 (x = 5, 15, 20, 25 and 27) chalcogenide films have been investigated by X-ray photoelectron spectroscopy (XPS). X-ray photoelectron spectra show that there is a peculiarity in the relative intensity ratio of the Sb 4d photoelectron peak associated with Sb2S3 to the Sb 4d photoelectron peak associated Sb2S5 at an average co-ordination number Z of 2.65-2.67. After contamination and photo-oxidation layers were removed from the surface of the films, X-ray photoelectron spectra were measured again. It has been found that binding energies of the Ge 2p and Sb 3d(3/2) photoelectron peaks, which reflect the electronic structure at lower core energy levels, are independent of Z. However, the binding energies of the Ge 3d and Sb 4d photoelectron peaks are more sensitive to Z and have a discontinuity at Z = 2.65.

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Published date: January 2002
Keywords: C140, X110
Organisations: Engineering Mats & Surface Engineerg Gp


Local EPrints ID: 37630
ISSN: 0022-3093
PURE UUID: 99296854-ef8b-4cd3-b5c4-01bd26fb2e98
ORCID for Liudi Jiang: ORCID iD

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Date deposited: 24 May 2006
Last modified: 17 Jul 2017 15:41

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Author: Liudi Jiang ORCID iD
Author: A.G. Fitzgerald
Author: M.J. Rose
Author: K. Christova
Author: A. Manov
Author: V. Pamukchieva

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