X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films
X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films
The effects of post-treated oxygen plasma etching procedures have been investigated for amorphous carbon nitride (a-C:N) films deposited by dc magnetron sputtering. X-ray photoelectron spectroscopy (XPS) has been used to study the microstructure of these films. It has been found that the relative concentration of the beta-C3N4-like phase in the a-C:N films is enhanced significantly by oxygen plasma etching and by increasing the dc bias voltages during the etch experiments. This study reveals that an oxygen plasma can work as an effective chemical etchant for the graphite-like carbon-nitrogen phase in a-C:N films. This suggests a very promising way of obtaining harder a-C:N films.
carbon nitride, plasma etching, XPS
144-148
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fitzgerald, A.G.
a25c0ee4-638b-47b5-987e-cd8969e29345
Rose, M.J.
bd6c0b8a-1e4e-4ce8-be63-6c0bb1cc59a4
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Rong, B.
50b3ed74-fa4c-4f8d-8bb3-b35e9a0cf268
van de Drift, E.
cec896a1-0417-4e08-b886-b72e4c954ac0
June 2002
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fitzgerald, A.G.
a25c0ee4-638b-47b5-987e-cd8969e29345
Rose, M.J.
bd6c0b8a-1e4e-4ce8-be63-6c0bb1cc59a4
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Rong, B.
50b3ed74-fa4c-4f8d-8bb3-b35e9a0cf268
van de Drift, E.
cec896a1-0417-4e08-b886-b72e4c954ac0
Jiang, Liudi, Fitzgerald, A.G., Rose, M.J., Cheung, R., Rong, B. and van de Drift, E.
(2002)
X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films.
Applied Surface Science, 193 (1-4), .
(doi:10.1016/S0169-4332(02)00225-8).
Abstract
The effects of post-treated oxygen plasma etching procedures have been investigated for amorphous carbon nitride (a-C:N) films deposited by dc magnetron sputtering. X-ray photoelectron spectroscopy (XPS) has been used to study the microstructure of these films. It has been found that the relative concentration of the beta-C3N4-like phase in the a-C:N films is enhanced significantly by oxygen plasma etching and by increasing the dc bias voltages during the etch experiments. This study reveals that an oxygen plasma can work as an effective chemical etchant for the graphite-like carbon-nitrogen phase in a-C:N films. This suggests a very promising way of obtaining harder a-C:N films.
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Published date: June 2002
Keywords:
carbon nitride, plasma etching, XPS
Organisations:
Engineering Mats & Surface Engineerg Gp
Identifiers
Local EPrints ID: 37635
URI: http://eprints.soton.ac.uk/id/eprint/37635
ISSN: 0169-4332
PURE UUID: 19ea8c53-2b68-4544-8094-fdf4f52d8935
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Date deposited: 24 May 2006
Last modified: 16 Mar 2024 03:47
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Contributors
Author:
A.G. Fitzgerald
Author:
M.J. Rose
Author:
R. Cheung
Author:
B. Rong
Author:
E. van de Drift
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