The University of Southampton
University of Southampton Institutional Repository

Conductive atomic force microscopy investigation of switching thresholds in titanium dioxide thin films

Conductive atomic force microscopy investigation of switching thresholds in titanium dioxide thin films
Conductive atomic force microscopy investigation of switching thresholds in titanium dioxide thin films
Titanium dioxide thin films have attracted increasing attention due to their potential in next-generation memory devices. Of particular interest are applications in resistive random access memory (RRAM) devices, where such thin films are used as active layers in metal-insulator-metal (MIM) configurations. When these devices receive a bias above a certain threshold voltage, they exhibit resistive switching (RS) i.e. the resistance of the oxide thin film can be tuned between a high resistive state (HRS) and a low resistive state (LRS). In the context of this work, we have used conductive atomic force microscopy (C-AFM) to identify the resistive switching thresholds of titanium dioxide thin films deposited on Si/SiO2/Ti/Pt stacks to be used in memory devices. By performing a set of reading/writing voltage scans over pristine areas of the thin films, we have identified the critical thresholds, which define a reversible operation (soft-breakdown, SB) via localised changes in electrical resistance across the film and an irreversible operation (hard-breakdown, HB) that includes both changes in local electrical resistance and thin film topography. We have also assessed the transition from SB to HB when thin films are stimulated repeatedly with potentials below the identified onsets of HB, validating a history dependent behaviour. This study is therefore aimed at presenting new insights in RRAM device programmability, reliability and eventually failure mechanisms.
1932-7447
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Regoutz, Anna
5f9fa784-fea8-42f9-949f-4fe7a908f8ce
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Gupta, Isha
11f9ea1a-e38a-45d4-930d-96ac78b3d734
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Trapatseli, Maria
1aea9f6b-2790-48b4-85d5-e600e60f6406
Carta, Daniela
120de978-2aaa-4b4d-bf5f-3625c503040d
Regoutz, Anna
5f9fa784-fea8-42f9-949f-4fe7a908f8ce
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Gupta, Isha
11f9ea1a-e38a-45d4-930d-96ac78b3d734
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Trapatseli, Maria, Carta, Daniela, Regoutz, Anna, Khiat, Ali, Serb, Alexander, Gupta, Isha and Prodromakis, Themistoklis (2015) Conductive atomic force microscopy investigation of switching thresholds in titanium dioxide thin films. The Journal of Physical Chemistry C. (doi:10.1021/acs.jpcc.5b01672).

Record type: Article

Abstract

Titanium dioxide thin films have attracted increasing attention due to their potential in next-generation memory devices. Of particular interest are applications in resistive random access memory (RRAM) devices, where such thin films are used as active layers in metal-insulator-metal (MIM) configurations. When these devices receive a bias above a certain threshold voltage, they exhibit resistive switching (RS) i.e. the resistance of the oxide thin film can be tuned between a high resistive state (HRS) and a low resistive state (LRS). In the context of this work, we have used conductive atomic force microscopy (C-AFM) to identify the resistive switching thresholds of titanium dioxide thin films deposited on Si/SiO2/Ti/Pt stacks to be used in memory devices. By performing a set of reading/writing voltage scans over pristine areas of the thin films, we have identified the critical thresholds, which define a reversible operation (soft-breakdown, SB) via localised changes in electrical resistance across the film and an irreversible operation (hard-breakdown, HB) that includes both changes in local electrical resistance and thin film topography. We have also assessed the transition from SB to HB when thin films are stimulated repeatedly with potentials below the identified onsets of HB, validating a history dependent behaviour. This study is therefore aimed at presenting new insights in RRAM device programmability, reliability and eventually failure mechanisms.

Full text not available from this repository.

More information

Accepted/In Press date: April 2015
e-pub ahead of print date: 5 May 2015
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 376683
URI: https://eprints.soton.ac.uk/id/eprint/376683
ISSN: 1932-7447
PURE UUID: b21fbf12-b84c-40ad-8c57-1c969f074117
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 06 May 2015 14:11
Last modified: 06 Jun 2018 12:24

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×