Tunable optical buffer based on III-V MEMS design
Tunable optical buffer based on III-V MEMS design
We present the design and fabrication of a tunable optical buffer device based on III-V semiconductor platform for telecommunication applications. The device comprises two indium phosphide suspended parallel waveguides with cross sectional dimension of 200 nm by 300 nm, separated by an air gap. The gap between the waveguides was designed to be adjustable by electrostatic force. Our simulation estimated that only 3 V is required to increase the separation distance from 50 nm to 500 nm; this translates to a change in the propagation delay by a factor of 2. The first generation of the suspended waveguide structure for optical buffering was fabricated. The sample was grown on an InP substrate by molecular beam epitaxy. The waveguide pattern is written onto a 300 nm thick InP device layer by electron beam lithography and plasma etching. Electrodes were incorporated into the structure to apply voltages for MEMS actuation.
optical buffer, waveguide, III-V semiconductors, MEMS, MOEMS, optical delay, actuation
Ng, W.H.
8d085a91-7054-4571-986b-4d6723f901ea
Podoliak, Nina
0908b951-00a7-48a5-bc82-631640910b9c
Horak, P.
520489b5-ccc7-4d29-bb30-c1e36436ea03
Liu, H.
c9560e2b-c593-4209-8578-39bd481ee456
Stewart, W.J.
bbe93aab-9477-4f08-9042-a0c453aeb7a5
Kenyon, A.J.
e2e3bbbc-23b6-4c67-832d-9a16abf4aa31
27 February 2015
Ng, W.H.
8d085a91-7054-4571-986b-4d6723f901ea
Podoliak, Nina
0908b951-00a7-48a5-bc82-631640910b9c
Horak, P.
520489b5-ccc7-4d29-bb30-c1e36436ea03
Liu, H.
c9560e2b-c593-4209-8578-39bd481ee456
Stewart, W.J.
bbe93aab-9477-4f08-9042-a0c453aeb7a5
Kenyon, A.J.
e2e3bbbc-23b6-4c67-832d-9a16abf4aa31
Ng, W.H., Podoliak, Nina, Horak, P., Liu, H., Stewart, W.J. and Kenyon, A.J.
(2015)
Tunable optical buffer based on III-V MEMS design.
In MOEMS and Miniaturized Systems XIV.
vol. 9375,
SPIE.
6 pp
.
(doi:10.1117/12.2078224).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We present the design and fabrication of a tunable optical buffer device based on III-V semiconductor platform for telecommunication applications. The device comprises two indium phosphide suspended parallel waveguides with cross sectional dimension of 200 nm by 300 nm, separated by an air gap. The gap between the waveguides was designed to be adjustable by electrostatic force. Our simulation estimated that only 3 V is required to increase the separation distance from 50 nm to 500 nm; this translates to a change in the propagation delay by a factor of 2. The first generation of the suspended waveguide structure for optical buffering was fabricated. The sample was grown on an InP substrate by molecular beam epitaxy. The waveguide pattern is written onto a 300 nm thick InP device layer by electron beam lithography and plasma etching. Electrodes were incorporated into the structure to apply voltages for MEMS actuation.
Text
6972.pdf
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More information
Published date: 27 February 2015
Additional Information:
paper 9375-24
Venue - Dates:
SPIE Photonics West '15, , San Francisco, United States, 2015-02-07 - 2015-02-12
Keywords:
optical buffer, waveguide, III-V semiconductors, MEMS, MOEMS, optical delay, actuation
Organisations:
Optoelectronics Research Centre, Quantum, Light & Matter Group
Identifiers
Local EPrints ID: 376883
URI: http://eprints.soton.ac.uk/id/eprint/376883
PURE UUID: d2075614-b291-465c-a7b1-ce7875cb11ae
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Date deposited: 11 May 2015 11:01
Last modified: 17 Mar 2024 03:21
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Contributors
Author:
W.H. Ng
Author:
Nina Podoliak
Author:
P. Horak
Author:
H. Liu
Author:
W.J. Stewart
Author:
A.J. Kenyon
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