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10Gb/s 5Vpp AND 5.6Vpp drivers implemented together with a monolithically integrated silicon modulator in 0.25µm SiGe:C BiCMOS

10Gb/s 5Vpp AND 5.6Vpp drivers implemented together with a monolithically integrated silicon modulator in 0.25µm SiGe:C BiCMOS
10Gb/s 5Vpp AND 5.6Vpp drivers implemented together with a monolithically integrated silicon modulator in 0.25µm SiGe:C BiCMOS
Two modulator drivers in 0.25 µm SiGe:C BiCMOS, which are integrated each together with a Mach-Zehnder modulator for electro-optical modulation (optical C-band) are presented. The fully integrated modulator occupies an area of 12.3 mm2. Carrier depletion in reverse biased pn junctions is used to adjust the refractive index in both arms of the Mach-Zehnder modulator (dual-drive configuration). The first integrated driver has a low power consumption of 0.68 W but a high gain of S21 = 37 dB and delivers an inverted as well as a non-inverted output data signal between 0 V and 2.5 V (5 Vpp differential). The driver circuit is supplied with 2.5 V and at the output stage with 3.5 V. Bit-error-ratio (BER) measurements with a pseudo-random-bit-sequence (PRBS 231 - 1) resulted in a BER better than 10-12 for input voltage differences down to 50 mVpp. A second adapted driver is supplied with 2.5 V and 4.2 V, consumes 0.87 W and delivers a differential data signal with 5.6 Vpp having a gain of S21 = 40 dB. The fully integrated modulator achieved at an optical wavelength of 1540 nm and 10 Gb/s data rate an extinction ratio of 3.3 dB for a 1 mm long modulator, VπLπ ~ 2 V cm, with driver variant 1 and 8.4 dB for a 2 mm long modulator with driver variant 2.
10 Gb/s, electro-optic modulator, modulator driver, monolithically integrated modulator, 0.25 µm SiGe:C BiCMOS
0030-4018
224-234
Goll, B.
752c6ee1-42fe-4ec5-a2a0-d428fb1d5c75
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Zimmermann, L.
b97dc0ea-9d50-4d0b-b6f0-30913e3a1669
Porte, H.
4069c101-f45b-4c39-ba5a-12aa5fc69e03
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Y.
64fd97b0-7ac6-458b-8e89-5ddc6b49c448
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Zimmermann, H.
559ddd30-a833-4cf0-a67e-b7b53bbfba17
Goll, B.
752c6ee1-42fe-4ec5-a2a0-d428fb1d5c75
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Zimmermann, L.
b97dc0ea-9d50-4d0b-b6f0-30913e3a1669
Porte, H.
4069c101-f45b-4c39-ba5a-12aa5fc69e03
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Y.
64fd97b0-7ac6-458b-8e89-5ddc6b49c448
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Zimmermann, H.
559ddd30-a833-4cf0-a67e-b7b53bbfba17

Goll, B., Thomson, D.J., Zimmermann, L., Porte, H., Gardes, F.Y., Hu, Y., Reed, Graham and Zimmermann, H. (2015) 10Gb/s 5Vpp AND 5.6Vpp drivers implemented together with a monolithically integrated silicon modulator in 0.25µm SiGe:C BiCMOS. Optics Communications, 336, 224-234. (doi:10.1016/j.optcom.2014.10.011).

Record type: Article

Abstract

Two modulator drivers in 0.25 µm SiGe:C BiCMOS, which are integrated each together with a Mach-Zehnder modulator for electro-optical modulation (optical C-band) are presented. The fully integrated modulator occupies an area of 12.3 mm2. Carrier depletion in reverse biased pn junctions is used to adjust the refractive index in both arms of the Mach-Zehnder modulator (dual-drive configuration). The first integrated driver has a low power consumption of 0.68 W but a high gain of S21 = 37 dB and delivers an inverted as well as a non-inverted output data signal between 0 V and 2.5 V (5 Vpp differential). The driver circuit is supplied with 2.5 V and at the output stage with 3.5 V. Bit-error-ratio (BER) measurements with a pseudo-random-bit-sequence (PRBS 231 - 1) resulted in a BER better than 10-12 for input voltage differences down to 50 mVpp. A second adapted driver is supplied with 2.5 V and 4.2 V, consumes 0.87 W and delivers a differential data signal with 5.6 Vpp having a gain of S21 = 40 dB. The fully integrated modulator achieved at an optical wavelength of 1540 nm and 10 Gb/s data rate an extinction ratio of 3.3 dB for a 1 mm long modulator, VπLπ ~ 2 V cm, with driver variant 1 and 8.4 dB for a 2 mm long modulator with driver variant 2.

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More information

Accepted/In Press date: 7 October 2014
Published date: 1 February 2015
Keywords: 10 Gb/s, electro-optic modulator, modulator driver, monolithically integrated modulator, 0.25 µm SiGe:C BiCMOS
Organisations: Optoelectronics Research Centre, Electronics & Computer Science

Identifiers

Local EPrints ID: 376911
URI: https://eprints.soton.ac.uk/id/eprint/376911
ISSN: 0030-4018
PURE UUID: 198f6750-5b0a-4f86-b4b2-ebe042f5f65c

Catalogue record

Date deposited: 11 May 2015 10:48
Last modified: 01 Aug 2018 16:31

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