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Silicon carbide photonic crystal cavities with integrated color centers

Silicon carbide photonic crystal cavities with integrated color centers
Silicon carbide photonic crystal cavities with integrated color centers
he recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here, we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q's as high as 45000 and mode volumes of approximately (λ/n) 3 . We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q's in the range of 900–1500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices.
0003-6951
011123-[6pp]
Calusine, Greg
cb7eb840-0b6b-4f81-9ee9-489b3c096b5d
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Awschalom, David D.
b92ebf4f-d280-49a4-858a-c70f2cabdc60
Calusine, Greg
cb7eb840-0b6b-4f81-9ee9-489b3c096b5d
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Awschalom, David D.
b92ebf4f-d280-49a4-858a-c70f2cabdc60

Calusine, Greg, Politi, Alberto and Awschalom, David D. (2014) Silicon carbide photonic crystal cavities with integrated color centers. Applied Physics Letters, 105 (1), 011123-[6pp]. (doi:10.1063/1.4890083).

Record type: Article

Abstract

he recent discovery of color centers with optically addressable spin states in 3C silicon carbide (SiC) similar to the negatively charged nitrogen vacancy center in diamond has the potential to enable the integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications. Here, we demonstrate the design, fabrication, and characterization of photonic crystal cavities in 3C SiC films with incorporated ensembles of color centers and quality factor (Q) to mode volume ratios similar to those achieved in diamond. Simulations show that optimized H1 and L3 structures exhibit Q's as high as 45000 and mode volumes of approximately (λ/n) 3 . We utilize the internal color centers as a source of broadband excitation to characterize fabricated structures with resonances tuned to the color center zero phonon line and observe Q's in the range of 900–1500 with narrowband photoluminescence collection enhanced by up to a factor of 10. By comparing the Q factors observed for different geometries with finite-difference time-domain simulations, we find evidence that nonvertical sidewalls are likely the dominant source of discrepancies between our simulated and measured Q factors. These results indicate that defect qubits in 3C SiC thin films show clear promise as a simple, scalable platform for interfacing defect qubits with photonic, optoelectronic, and optomechanical devices.

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More information

Accepted/In Press date: 8 June 2014
e-pub ahead of print date: 11 July 2014
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 377101
URI: http://eprints.soton.ac.uk/id/eprint/377101
ISSN: 0003-6951
PURE UUID: b356f854-6245-4de8-945b-1d4a4efcf905
ORCID for Alberto Politi: ORCID iD orcid.org/0000-0002-3668-9474

Catalogue record

Date deposited: 19 May 2015 13:51
Last modified: 03 Dec 2019 01:35

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Contributors

Author: Greg Calusine
Author: Alberto Politi ORCID iD
Author: David D. Awschalom

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