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Polytype control of spin qubits in silicon carbide

Polytype control of spin qubits in silicon carbide
Polytype control of spin qubits in silicon carbide
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials-driven approach that could ultimately lead to 'designer' spins with tailored properties. Here we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including states in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent states, these interactions provide a route to dipole-coupled networks of separately addressable spins.
1-7
Falk, Abram L.
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Buckley, Bob B.
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Calusine, Greg
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Koehl, William F.
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Dobrovitski, Viatcheslav V.
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Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Zorman, Christian A.
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Feng, Philip X-L.
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Awschalom, David D.
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Falk, Abram L.
ae32e51c-bb99-4d50-a945-34a509cf7582
Buckley, Bob B.
a8c93193-4634-407a-903c-0c35af457502
Calusine, Greg
cb7eb840-0b6b-4f81-9ee9-489b3c096b5d
Koehl, William F.
345162ef-b0ca-4891-a832-f10ceb45126a
Dobrovitski, Viatcheslav V.
9b68efc9-d28e-4c38-974c-a556eef0d6ba
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Zorman, Christian A.
bb1bdc8c-9671-4b3b-9c98-a572e5acb415
Feng, Philip X-L.
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Awschalom, David D.
b92ebf4f-d280-49a4-858a-c70f2cabdc60

Falk, Abram L., Buckley, Bob B., Calusine, Greg, Koehl, William F., Dobrovitski, Viatcheslav V., Politi, Alberto, Zorman, Christian A., Feng, Philip X-L. and Awschalom, David D. (2013) Polytype control of spin qubits in silicon carbide. Nature Communications, 4 (1819), 1-7. (doi:10.1038/ncomms2854).

Record type: Article

Abstract

Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials-driven approach that could ultimately lead to 'designer' spins with tailored properties. Here we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including states in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent states, these interactions provide a route to dipole-coupled networks of separately addressable spins.

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Accepted/In Press date: 9 April 2013
Published date: 7 May 2013
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 377103
URI: http://eprints.soton.ac.uk/id/eprint/377103
PURE UUID: 4c857133-bff9-49ab-983c-f927e7351b33
ORCID for Alberto Politi: ORCID iD orcid.org/0000-0002-3668-9474

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Date deposited: 26 May 2015 09:13
Last modified: 17 Dec 2019 01:36

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Contributors

Author: Abram L. Falk
Author: Bob B. Buckley
Author: Greg Calusine
Author: William F. Koehl
Author: Viatcheslav V. Dobrovitski
Author: Alberto Politi ORCID iD
Author: Christian A. Zorman
Author: Philip X-L. Feng
Author: David D. Awschalom

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