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New approaches for enhancing light emission from Er-based materials and devices

New approaches for enhancing light emission from Er-based materials and devices
New approaches for enhancing light emission from Er-based materials and devices
In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron–hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 ?m in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 ?m owing to the efficient reduction of the defect density.
erbium, electroluminescent devices, photonic crystals, erbium compounds
1386-9477
891-898
Irrera, A.
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Galli, M.
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Miritello, M.
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Lo Savio, R.
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Iacona, F.
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Franzò, G.
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Canino, A.
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Piro, A.M.
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Belotti, M.
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Gerace, D.
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Politi, A.
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Liscidini, M.
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Patrini, M.
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Sanfilippo, D.
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Fallica, P.G.
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Andreani, L.C.
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Priolo, F.
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Irrera, A.
8b75a0a1-fc4c-48ab-95af-d13c19e5489e
Galli, M.
2a7fbd31-f762-4b1d-9e43-1ef3f8d432a6
Miritello, M.
ff78ffff-6611-4c76-be7d-c7a39fae813a
Lo Savio, R.
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Iacona, F.
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Franzò, G.
16248a08-2a59-4e1e-aac8-0ce74e0b3307
Canino, A.
a535b761-0400-4c24-8f69-a6584f6dd1c7
Piro, A.M.
b7fef993-483b-4cac-a202-59963a1e0200
Belotti, M.
240fcfe3-2494-43ba-8e1c-186f8b251240
Gerace, D.
26b4ac09-db46-4fe6-9077-5f0be2deb83c
Politi, A.
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Liscidini, M.
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Patrini, M.
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Sanfilippo, D.
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Fallica, P.G.
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Andreani, L.C.
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Priolo, F.
a9c8c1cb-af1e-4068-834c-4bd7b8729286

Irrera, A., Galli, M., Miritello, M., Lo Savio, R., Iacona, F., Franzò, G., Canino, A., Piro, A.M., Belotti, M., Gerace, D., Politi, A., Liscidini, M., Patrini, M., Sanfilippo, D., Fallica, P.G., Andreani, L.C. and Priolo, F. (2009) New approaches for enhancing light emission from Er-based materials and devices. Physica E: Low-dimensional Systems and Nanostructures, 41 (6), 891-898. (doi:10.1016/j.physe.2008.08.050).

Record type: Article

Abstract

In this work, we present some approaches recently developed for enhancing light emission from Er-based materials and devices. We have investigated the luminescence quenching processes limiting quantum efficiency in light-emitting devices based on Si nanoclusters (Si nc) or Er-doped Si nc. It is found that carrier injection, while needed to excite Si nc or Er ions through electron–hole recombination, at the same time produces an efficient non-radiative Auger de-excitation with trapped carriers. A strong light confinement and enhancement of Er emission at 1.54 ?m in planar silicon-on-insulator waveguides containing a thin layer (slot) of SiO2 with Er-doped Si nc at the center of the Si core has been obtained. By measuring the guided photoluminescence from the cleaved edge of the sample, we have observed a more than fivefold enhancement of emission for the transverse magnetic mode over the transverse electric one at room temperature. Slot waveguides have also been integrated with a photonic crystal (PhC), consisting of a triangular lattice of holes. An enhancement by more than two orders of magnitude of the Er near-normal emission is observed when the transition is in resonance with an appropriate mode of the PhC slab. Finally, in order to increase the concentration of excitable Er ions, a completely different approach, based on Er disilicate thin films, has been explored. Under proper annealing conditions crystalline and chemically stable Er2Si2O7 films are obtained; these films exhibit a strong luminescence at 1.54 ?m owing to the efficient reduction of the defect density.

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More information

e-pub ahead of print date: 28 August 2008
Published date: May 2009
Keywords: erbium, electroluminescent devices, photonic crystals, erbium compounds
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 377106
URI: http://eprints.soton.ac.uk/id/eprint/377106
ISSN: 1386-9477
PURE UUID: ebc0a3e9-10b1-4432-9193-93a7cb7e95f2
ORCID for A. Politi: ORCID iD orcid.org/0000-0002-3668-9474

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Date deposited: 26 May 2015 09:29
Last modified: 20 Jul 2019 00:37

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Contributors

Author: A. Irrera
Author: M. Galli
Author: M. Miritello
Author: R. Lo Savio
Author: F. Iacona
Author: G. Franzò
Author: A. Canino
Author: A.M. Piro
Author: M. Belotti
Author: D. Gerace
Author: A. Politi ORCID iD
Author: M. Liscidini
Author: M. Patrini
Author: D. Sanfilippo
Author: P.G. Fallica
Author: L.C. Andreani
Author: F. Priolo

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