Practical determination of individual element resistive states in selectorless RRAM arrays
Practical determination of individual element resistive states in selectorless RRAM arrays
Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-point resistance on the basis of multiple measurements. Results indicate that the standard method performs as well as or better than its competitors. SPICE simulations are then performed with controlled amounts of non-idealities introduced in the system in order to test whether any technique offers particular resilience against typical practical imperfections such as crossbar line resistance. We conclude that even though certain non-idealities are shown to be minimized by different circuit-level read-out strategies, line resistance within the crossbar remains an outstanding challenge
827-835
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
29 October 2015
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Serb, A., Redman-White, W., Papavassiliou, C. and Prodromakis, T.
(2015)
Practical determination of individual element resistive states in selectorless RRAM arrays.
IEEE Transactions on Circuits and Systems I: Regular Papers, 63 (6), .
(doi:10.1109/TCSI.2015.2476296).
Abstract
Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-point resistance on the basis of multiple measurements. Results indicate that the standard method performs as well as or better than its competitors. SPICE simulations are then performed with controlled amounts of non-idealities introduced in the system in order to test whether any technique offers particular resilience against typical practical imperfections such as crossbar line resistance. We conclude that even though certain non-idealities are shown to be minimized by different circuit-level read-out strategies, line resistance within the crossbar remains an outstanding challenge
Text
TCAS_CB_SPICE_2014_v13.pdf
- Accepted Manuscript
More information
Accepted/In Press date: 18 August 2015
Published date: 29 October 2015
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Organisations:
Nanoelectronics and Nanotechnology, EEE
Identifiers
Local EPrints ID: 377543
URI: http://eprints.soton.ac.uk/id/eprint/377543
ISSN: 1549-8328
PURE UUID: fa722d71-a9b1-4cae-9637-571bf9506213
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Date deposited: 09 Jun 2015 10:47
Last modified: 14 Mar 2024 20:05
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Contributors
Author:
A. Serb
Author:
W. Redman-White
Author:
C. Papavassiliou
Author:
T. Prodromakis
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