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Practical determination of individual element resistive states in selectorless RRAM arrays

Practical determination of individual element resistive states in selectorless RRAM arrays
Practical determination of individual element resistive states in selectorless RRAM arrays
Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-point resistance on the basis of multiple measurements. Results indicate that the standard method performs as well as or better than its competitors. SPICE simulations are then performed with controlled amounts of non-idealities introduced in the system in order to test whether any technique offers particular resilience against typical practical imperfections such as crossbar line resistance. We conclude that even though certain non-idealities are shown to be minimized by different circuit-level read-out strategies, line resistance within the crossbar remains an outstanding challenge
1549-8328
827-835
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Serb, A.
30f5ec26-f51d-42b3-85fd-0325a27a792c
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Serb, A., Redman-White, W., Papavassiliou, C. and Prodromakis, T. (2015) Practical determination of individual element resistive states in selectorless RRAM arrays. IEEE Transactions on Circuits and Systems I: Regular Papers, 63 (6), 827-835. (doi:10.1109/TCSI.2015.2476296).

Record type: Article

Abstract

Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-point resistance on the basis of multiple measurements. Results indicate that the standard method performs as well as or better than its competitors. SPICE simulations are then performed with controlled amounts of non-idealities introduced in the system in order to test whether any technique offers particular resilience against typical practical imperfections such as crossbar line resistance. We conclude that even though certain non-idealities are shown to be minimized by different circuit-level read-out strategies, line resistance within the crossbar remains an outstanding challenge

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Accepted/In Press date: 18 August 2015
Published date: 29 October 2015
Additional Information: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
Organisations: Nanoelectronics and Nanotechnology, EEE

Identifiers

Local EPrints ID: 377543
URI: https://eprints.soton.ac.uk/id/eprint/377543
ISSN: 1549-8328
PURE UUID: fa722d71-a9b1-4cae-9637-571bf9506213
ORCID for T. Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 09 Jun 2015 10:47
Last modified: 06 Jun 2018 12:24

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