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Total dose hardness of TiN/HfOx/TiN resistive random access memory

Total dose hardness of TiN/HfOx/TiN resistive random access memory
Total dose hardness of TiN/HfOx/TiN resistive random access memory
Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after 60Co gamma irradiation. Monoclinic HfOx deposited at 400°C did not result in resistive switching. Deposition at 300°C and 350°C resulted in cubic HfOx which switched successfully. Both stoichiometric HfO2 and sub-oxides HfO2-x result in similar memory characteristics. All devices are shown to be radiation hard up to 10 Mrad(Si), independent of stoichiometry.
0018-9499
1-6
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
Shaw, Chris
76d8effd-a5f7-49ea-aa53-922c83edaf3a
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
Shaw, Chris
76d8effd-a5f7-49ea-aa53-922c83edaf3a
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Morgan, Katrina, Huang, Ruomeng, Potter, Kenneth, Shaw, Chris, Redman-White, William and de Groot, Kees (2014) Total dose hardness of TiN/HfOx/TiN resistive random access memory. IEEE Transactions on Nuclear Science, 61 (6), 1-6. (doi:10.1109/TNS.2014.2365058).

Record type: Article

Abstract

Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after 60Co gamma irradiation. Monoclinic HfOx deposited at 400°C did not result in resistive switching. Deposition at 300°C and 350°C resulted in cubic HfOx which switched successfully. Both stoichiometric HfO2 and sub-oxides HfO2-x result in similar memory characteristics. All devices are shown to be radiation hard up to 10 Mrad(Si), independent of stoichiometry.

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More information

Accepted/In Press date: 17 October 2014
e-pub ahead of print date: 12 November 2014
Published date: December 2014
Organisations: Optoelectronics Research Centre, Electronics & Computer Science, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 378073
URI: https://eprints.soton.ac.uk/id/eprint/378073
ISSN: 0018-9499
PURE UUID: 0b87fe30-cfc5-4706-8962-b09642c85876
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 26 Jun 2015 10:57
Last modified: 20 Jul 2019 01:05

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Contributors

Author: Katrina Morgan ORCID iD
Author: Ruomeng Huang
Author: Kenneth Potter
Author: Chris Shaw
Author: William Redman-White
Author: Kees de Groot ORCID iD

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