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High-speed detection at two micrometres with monolithic silicon photodiodes

High-speed detection at two micrometres with monolithic silicon photodiodes
High-speed detection at two micrometres with monolithic silicon photodiodes
With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’[1]. A promising solution is to open new spectral regions at wavelengths near 2µm and to exploit the long-wavelength transmission and amplification capabilities of hollowcore photonic-bandgap fibres[2,3] and the recently available thulium-doped fibre amplifiers[4]. To date, photodetector devices for this window have largely relied on III-V materials[5] or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility[6-9]. Here, we describe a silicon photodiode operating at 20 Gb/s in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.
1749-4885
393-396
Ackert, Jason J.
4423ac60-02af-4c7c-8aa9-d74ddd4b97de
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Shen, Li
f45b1185-ca40-4af3-8b79-d444dc11dc8f
Peacock, Anna C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Jessop, Paul E.
60217b16-3ece-4150-bfb5-b1adcc8e36f8
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
Ackert, Jason J.
4423ac60-02af-4c7c-8aa9-d74ddd4b97de
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Shen, Li
f45b1185-ca40-4af3-8b79-d444dc11dc8f
Peacock, Anna C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Jessop, Paul E.
60217b16-3ece-4150-bfb5-b1adcc8e36f8
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b

Ackert, Jason J., Thomson, David J., Shen, Li, Peacock, Anna C., Jessop, Paul E., Reed, Graham T., Mashanovich, Goran Z. and Knights, Andrew P. (2015) High-speed detection at two micrometres with monolithic silicon photodiodes. Nature Photonics, 9 (6), 393-396. (doi:10.1038/nphoton.2015.81).

Record type: Letter

Abstract

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’[1]. A promising solution is to open new spectral regions at wavelengths near 2µm and to exploit the long-wavelength transmission and amplification capabilities of hollowcore photonic-bandgap fibres[2,3] and the recently available thulium-doped fibre amplifiers[4]. To date, photodetector devices for this window have largely relied on III-V materials[5] or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility[6-9]. Here, we describe a silicon photodiode operating at 20 Gb/s in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.

Full text not available from this repository.

More information

Accepted/In Press date: 15 April 2015
Published date: 25 May 2015
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 378214
URI: https://eprints.soton.ac.uk/id/eprint/378214
ISSN: 1749-4885
PURE UUID: 8d6589d5-0f1e-495b-ac06-ea92a4dabc4a
ORCID for Anna C. Peacock: ORCID iD orcid.org/0000-0002-1940-7172

Catalogue record

Date deposited: 29 Jun 2015 10:16
Last modified: 20 Nov 2018 01:34

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