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Effect of laser wavelength on structure and photoelectric properties of a-Si:H films crystallized by femtosecond laser pulses

Effect of laser wavelength on structure and photoelectric properties of a-Si:H films crystallized by femtosecond laser pulses
Effect of laser wavelength on structure and photoelectric properties of a-Si:H films crystallized by femtosecond laser pulses
Femtosecond laser processing of hydrogenated amorphous silicon is a perspective method for thin film solar cells production. It allows to make local crystallization and surface texturing of the films which results in the enhancement of their light absorption and stability of parameters. Thickness of modified material depends strongly on a laser wavelength. However laser wavelength affects also other properties of the film. Therefore here we study structure, surface morphology and photoelectric properties of hydrogenated amorphous silicon films treated by femtosecond laser pulses of different photon energies, namely above, around and below the mobility gap of amorphous silicon.
absorption, amorphous silicon, femtosecond laser, laser crystallisation, nanocrystalline silicon, photoconductivity
1555-130X
728-733
Khenkin, M.V.
301afb96-212e-471a-be48-f3c139500085
Amasev, D.V.
ad78ac80-6c19-4056-bbc5-e4df0da81e9a
Dudnik, A.O.
1b5342f5-797e-48b2-8055-f383e051d07a
Emelyanov, A.V.
1a2de0b0-3faa-4d4a-958a-0a678301df48
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Kazanskii, A.G.
a123a8d5-67bb-47a4-88f4-76c949c5f792
Drevinskas, R.
23f858b5-8750-4113-ba11-49cfefc3dbb7
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Khenkin, M.V.
301afb96-212e-471a-be48-f3c139500085
Amasev, D.V.
ad78ac80-6c19-4056-bbc5-e4df0da81e9a
Dudnik, A.O.
1b5342f5-797e-48b2-8055-f383e051d07a
Emelyanov, A.V.
1a2de0b0-3faa-4d4a-958a-0a678301df48
Forsh, P.A.
c2bb1dc8-3d86-444b-8ca4-1270971380f5
Kazanskii, A.G.
a123a8d5-67bb-47a4-88f4-76c949c5f792
Drevinskas, R.
23f858b5-8750-4113-ba11-49cfefc3dbb7
Beresna, M.
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c

Khenkin, M.V., Amasev, D.V., Dudnik, A.O., Emelyanov, A.V., Forsh, P.A., Kazanskii, A.G., Drevinskas, R., Beresna, M. and Kazansky, P.G. (2015) Effect of laser wavelength on structure and photoelectric properties of a-Si:H films crystallized by femtosecond laser pulses. Journal of Nanoelectronics and Optoelectronics, 9 (6), 728-733. (doi:10.1166/jno.2014.1668).

Record type: Article

Abstract

Femtosecond laser processing of hydrogenated amorphous silicon is a perspective method for thin film solar cells production. It allows to make local crystallization and surface texturing of the films which results in the enhancement of their light absorption and stability of parameters. Thickness of modified material depends strongly on a laser wavelength. However laser wavelength affects also other properties of the film. Therefore here we study structure, surface morphology and photoelectric properties of hydrogenated amorphous silicon films treated by femtosecond laser pulses of different photon energies, namely above, around and below the mobility gap of amorphous silicon.

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More information

Published date: March 2015
Keywords: absorption, amorphous silicon, femtosecond laser, laser crystallisation, nanocrystalline silicon, photoconductivity
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 378661
URI: https://eprints.soton.ac.uk/id/eprint/378661
ISSN: 1555-130X
PURE UUID: befdd735-a6ec-474b-8f75-c668dbaadf76

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Date deposited: 10 Jul 2015 14:15
Last modified: 19 Nov 2018 17:31

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